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Part: PDM31096LL
Category:
Memory
-> SRAM
-> Async. SRAM
-> 4 Mb
Description: 512kx8-bit Low Power 3.3 Volt
Company: IXYS Corporation
Datasheet: Download PDM31096LL datasheet File size : 221 kB
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Datasheet text preview:
PRELIMINARY
PDM31096LL
512K x 8-Bit Low Power 3.3 Volt
Features
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Description
The PDM31096LL is a very low power CMOS static RAM organized as 524,288 x 8 bits. Writing to this device is accomplished when the write enable (WE) and the chip enable (CE) inputs are both LOW. Reading is accomplished when WE remains HIGH and CE and OE are both LOW. The PDM31096LL operates from a single +3.3V power supply and all the inputs and outputs are fully TTL- compatible. The device supports low data retention voltage for battery back-up operation with low current. The PDM31096LL is available in a 32-pin plastic TSOP (I) and a 32-pin plastic STSOP (I).
High-speed access times Com'l: 70, 85 and 100ns Low power operation (typical) - PDM31096LL Active: 65 mW Standby: 10µW Single +3.3V (±0.3V) power supply TTL-compatible inputs and outputs I/Os are 5V tolerant Low data retention voltage: 1.5V Packages Plastic TSOP (I) - T Plastic STSOP (I) - ST
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Functional Block Diagram
Addresses
A0 · · · · · A18
Decoder
· · · · · ·
Memory Matrix
I/O 0 · · I/O 7
····· Input Data Control Column I/O
· ·
CE WE OE
Control
·
Rev. 0.0 - 3/31/98
1
PRELIMINARY
PDM31096LL
Pin Configurations TSOP (I), STSOP (I)
Pin Description
Name Description Address Inputs Data Inputs/Outputs Output Enable Input Write Enable Input Chip Enable Input Power (+3.3V) Ground
A11 A9 A8 A13 WE A17 A15 Vcc A18 A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 Vss I/O2 I/O1 I/O0 A0 A1 A2 A3
A18-A0 I/O7-I/O0 OE WE CE VCC VSS
Truth Table
OE X X L X H WE X X H L H CE H X L L L I/O Hi-Z Hi-Z DOUT DIN Hi-Z MODE Standby Standby Read Write Output Disable
NOTE: H = VIH, L = VIL, X = DON'T CARE
Absolute Maximum Ratings (1)
Symbol VTERM TBIAS TSTG PT IOUT Tj Rating Terminal Voltage with Respect to Vss Temperature Under Bias Storage Temperature Power Dissipation DC Output Current Maximum Junction Temperature (2) Com'l. 0.5 to +4.6 55 to +125 55 to +125 1.0 20 125 Ind. 0.5 to +4.6 65 to +135 65 to +150 1.0 20 125 Unit V °C °C W mA °C
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Appropriate thermal calculations should be performed in all cases and specifically for those where the chosen package has a large thermal resistance (e.g., TSOP). The calculation should be of the form: Tj = Ta + P * ja where Ta is the ambient temperature, P is average operating power and ja the thermal resistance of the package. For this product, use the following ja values: SOJ: 78 oC/W TSOP: 112 oC/W 2 Rev. 0.0 - 3/31/98
PRELIMINARY
PDM31096LL
Recommended DC Operating Conditions
Symbol VCC VSS Commercial Parameter Supply Voltage Supply Voltage Ambient Temperature Min. 3.0 0 0 Typ. 3.3 0 25 Max. 3.6 0 70 Unit V V °C
DC Electrical Characteristics (VCC = 3.3V ± 0.3V)
Symbol ILI ILO Parameter Input Leakage Current Output Leakage Current Test Conditions VCC = MAX., VIN = Vss to VCC VCC= MAX., CE= VIH VOUT = Vss to VCC Min. 1 1 Typ. (2) -- -- Max. 1 1 Unit µA µA
VIL VIH VOL VOH ICC
Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage Operating Power Supply Current IOL= 2mA, VCC = Min. IOH = 1 mA, VCC = Min. VCC = MAX CE = VIL IOUT = 0 mA f = fMAX VCC = MAX CE = VIH VCC = MAX CE VCC -0.2V VIN VCC -0.2V or 0.2V
0.3(1) 2.2 -- 2.4 --
-- -- -- -- --
0.8 Vcc+0.3 0.4 -- 40
V V V V mA
ISB ISB1
Standby Current (TTL) Full Standby Current (CMOS)
-- --
-- 3 µA
1 60
mA µA
NOTE:1.VIL(min) = 3.0V for pulse width less than 20 ns. 2. VCC = 3.3V, 25C.
Rev. 0.0 - 3/31/98
3
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