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Part: IXGH12N90C
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT High Speed
Description:
Company: IXYS Corporation
Datasheet: Download IXGH12N90C datasheet File size : 548 kB
Request For quote: Find where to buy IXGH12N90C
Datasheet text preview:
HiPerFASTTM IGBT LightspeedTM Series
IXGH 12N90C IXGX 12N90C
VCES I C25 VC E S ( s a t ) tfi(typ)
= = = =
900 24 3.0 70
V A V ns
Symbol V CES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load TC = 25°C
Maximum Ratings 900 900 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 (IXGH)
C (TAB) G C E
PLUS 247 (IXGX)
G
(TAB) D
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 N m / l b . i n . 0.55/5 N m / l b . i n . 300 6 °C g
G = Gate, E = Emitter, Features
C = Collector, TAB = Collector
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight
ery high frequency IGBT ew generation HDMOSTM process I nternational standard package H igh peak current handling capability
V N
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 2.5 TJ = 25°C TJ = 125°C 5.0 100 1.5 ±1 0 0 3.0 V V µA mA nA V FC circuit C motor speed control D C servo and robot drives S witch-mode and resonant-mode power supplies H igh power audio amplifiers
P A
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VGE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V
Advantages
F
H
ast switching speed igh power density
© 2003 IXYS All rights reserved
98582B(03/03)
IXGH 12N90C IXGX 12N90C
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 10 780 VCE = 25 V, VGE = 0 V, f = 1 MHz 60 15 33 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 · VCES, RG = Roff = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 · VCES, RG = Roff = 22 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 10 12 20 20 135 70 0.32 20 20 0.15 200 150 0.70 1.25 TO-247 PLUS 247 0.25 0.15 200 180 0.70 S
P
TO-247 Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W K/W PLUS 247 Outline
e
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 12N90C IXGX 12N90C
Fig. 1. Saturation Voltage Characteristics @ 25oC
50
TJ = 25OC
Fig. 2. Extended Output Characteristics
100
TJ = 25oC 13V 11V 9V VGE = 15V
40
IC - Amperes
30 20 10
IC - Amperes
VGE = 15V 13V 11V
9V
75
50
7V
25
7V 5V
0
0 0 2 4 6 8 10
0
5
10
15
VCE - Volts
VCE - Volts
Fig. 3. Saturation Voltage Characteristics @ 125oC
50
TJ = 125OC VGE = 15V 13V 11V
Fig. 4. Temperature Dependence of VCE(SAT)
1.6
VGE = 15V
VCE (SAT) - Normalized
40
IC - Amperes
1.4
IC = 24A
30 20 10 0
9V 7V
1.2
IC = 12A
1.0
IC = 6A
5V
0
2
4
6
8
10
0.8
-25
0
25
50
75
100 125 150
VCE - Volts
T J - Degrees C
Fig. 5. Admittance Curves
60 55 50 45 40 35 30 25 20 15 10 5 0
1000
Fig. 6. Capacitance Curves
Ciss
Capacitance - pF
IC - Amperes
100
Coss
TJ = 125oC TJ = 25oC TJ = -40 C
o
Crss
4
5
6
7
8
9
10
11
12
10
0
5
10
15
20
25
30
35
40
VGE - Volts
VCE - Volts
© 2003 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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