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Part: IXGH12N60CD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: Hiperfast (tm) Igbt Lightspeed (tm) Series
Company: IXYS Corporation
Datasheet: Download IXGH12N60CD1 datasheet File size : 548 kB
Request For quote: Find where to buy IXGH12N60CD1
Datasheet text preview:
HiPerFASTTM IGBT LightspeedTM Series
IXGH 12N60CD1
VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Clamped inductive load, L = 300 µH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C
TO-247 AD
C (TAB) G C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Mounting torque with screw M3 Mounting torque with screw M3.5
0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6 300 g °C Features
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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Very high frequency IGBT New generation HDMOSTM process International standard package JEDEC TO-247AD High peak current handling capability
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.0 200 1.5 ±100 2.1 2.7 V V µA mA nA V
Applications
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BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VGE = VGE
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VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15 V
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PFC circuit AC motor speed control DC servo and robot drives Switch-mode and resonant-mode power supplies High power audio amplifiers
Advantages
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Fast switching speed High power density
© 2002 IXYS All rights reserved
98623A (2/02)
IXGH 12N60CD1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5 11 860 VCE = 25 V, VGE = 0 V, f = 1 MHz 100 15 32 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V, L = 300 µH VCE = 0.8 VCES, RG = Roff = 18 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IGBT 0.25 10 10 20 20 60 55 0.09 20 20 0.5 85 85 0.27 180 180 0.60 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ
e
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .1 8 5 .2 0 9 .087 .102 .0 5 9 .0 9 8 .0 4 0 .0 5 5 .065 .084 .113 .123 .0 1 6 . 0 3 1 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .1 7 0 . 2 1 6 242 BSC
1.25 K/W K/W
Reverse Diode (FRED) Symbol VF Test Conditions I F = 15A; T VJ = 150°C T VJ = 25°C
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.7 2.5 2 2.5 V V A
IRM t rr RthJC
V R = 100 V; I F =25A; -di F / d t = 100 A/µs L < 0.05 µH; T VJ = 100°C IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ = 25°C Diode
35
ns 1.6 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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