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Part: IXGH12N100AU1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Medium Voltage 600-1199 Volts
Description: 1000V High Voltage Igbt
Company: IXYS Corporation
Datasheet: Download IXGH12N100AU1 datasheet File size : 548 kB
Request For quote: Find where to buy IXGH12N100AU1
Datasheet text preview:
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
Combi Pack
VCES IXGH 12N100U1 IXGH 12N100AU1
I C25 V C E ( s a t )
1000 V 24 A 3.5 V 1000 V 24 A 4.0 V
Symbol V CES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 150 W Clamped inductive load, L = 300 mH TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 24 12 48 ICM = 24 @ 0.8 VCES 100 -55 ... +150 150 -55 ... +150 W °C °C °C V V V V
TO-247AD
G
C (TAB) C E
A A A A
G = Gate E = Emitter
C = Collector TAB = Collector
Mounting torque with screw M3
1.13/10 Nm/lb.in. 6 300 g °C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) B V CES IC = 3 mA, VGE = 0 V BVCES temperature coefficient V GE(th) IC = 500 mA, VGE = VGE VGE(th) temperature coefficient ICES VCE = 0.8, VCES VG E = 0 V I GES V CE(sat) VCE = 0 V, VGE = ±20 V IC = ICE90, VGE = 15
Min. 1000
Characteristic Values Typ. Max. V 0.072 %/K 5.5 -0.192 V %/K 300 5 ±100 mA mA nA V V
Features · International standard packages JEDEC TO-247 · IGBT with antiparallel FRED in one package · HDMOSTM process · L o w V CE(sat) - for minimum on-state conduction losses · MOS Gate turn-on - drive simplicity · Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications · DC choppers · AC motor speed control · DC servo and robot drives · Uninterruptible power supplies (UPS) · Switch-mode and resonant-mode power supplies Advantages · Easy to mount with one screw · Reduces assembly time and cost · Space savings (two devices in one package)
2.5
TJ = 25°C TJ = 125°C
12N100U1 12N100AU1
3.5 4.0
IXYS reserves the right to change limits, test conditions, and dimensions.
95596C (7/00)
© 2000 IXYS All rights reserved
1-5
IXGH12N100U1
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gf s Cies C oes Cres Qg Q ge Q gc td(on) t ri td(off) t fi Eoff td(on) t ri E(on) td(off) t fi Eoff RthJC RthCK 0.25 Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 300 mH 12N100U1 12N100AU1 12N100U1 12N100AU1 VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, TJ = 25°C IC = IC90, VGE = 15 V, L = 300 mH 12N100U1 12N100AU1 12N100U1 12N100AU1 VCE = 800 V, RG = Roff = 120 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1MHz IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % 750 120 30 65 8 24 100 200 850 1000 800 1000 500 2.5 1.5 100 200 1.1 900 1250 950 3.5 2.2 3.0 700 90 20 45 pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns ns mJ mJ 1.25 K/W K/W Characteristic Values Min. Typ. Max. 6 10 S
IXGH12N100AU1
TO-247 AD (IXGH) Outline
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
1.5 2.49
Reverse Diode (FRED) (T J = 25°C, unless otherwise specified) Symbol Test Conditions VF IRM t rr RthJC IF =8A, VGE = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms VR = 540 V IF = 1 A, -di/dt = 50 A/ms, VR = 30 V
Characteristic Values Min. Typ. Max. 2.75 V
TJ = 125°C TJ = 25°C
6.5 120 50
60
A ns ns
2.5 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXGH12N100U1
50
TJ = 25°C
IXGH12N100AU1
100
VGE = 15V 13V 11V
TJ = 25°C
VGE = 15V
40
80
IC - Amperes
IC - Amperes
9V
13V
30 20
7V
60
11V
40
9V
10 0 0 2 4 6 8 10
20
7V
0
0
4
8
12
16
20
VCE - Volts
VCE - Volts
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
50
TJ = 125°C
1.6
VGE = 15V 13V 11V VGE = 15V IC = 24A
VCE (sat) - Normalized
40
1.4 1.2
IC = 12A
IC - Amperes
30
9V
20
7V
1.0 0.8
IC = 6A
10 0 0 2 4 6 8 10
0.6 25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of VCE(sat)
50
VCE = 10V
1000
Ciss f = 1Mhz
40 30
TJ = 125°C
Capacitance - pF
TJ = 25°C
IC - Amperes
Coss
100
20 10 0 2 4 6 8 10 12
Crss
10 0 5 10 15 20 25 30 35 40
VGE - Volts
VCE-Volts
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
© 2000 IXYS All rights reserved
3-5
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