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Part: IXGH10N170A
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> NPT IGBT
Description:
Company: IXYS Corporation
Datasheet: Download IXGH10N170A datasheet File size : 548 kB
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Datasheet text preview:
Advance Technical Data
High Voltage IGBT
I X G H 10N170A VCES I X G T 10N170A IC25 VCE(sat) tfi(typ)
= 1700 V = 10 A = 6.0 V = 35 ns
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Clamped inductive load TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22 TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 10 5 20 ICM = 20 @ 0.8 VCES 10 110 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E C = Collector, TAB = Collector
µs W °C °C °C
G = Gate, E = Emitter,
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in. 300 °C 6 4 g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Features I nternational standard packages JEDEC TO-268 a n d JEDEC TO-247 AD H igh current handling capability M OS Gate turn-on - drive simplicity R ugged NPT structure M olding epoxies meet UL 94 V-0 flammability classification Applications C apacitor discharge & pulser circuits A C motor speed control D C servo and robot drives D C choppers U ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies Advantages H igh power density S uitable for surface mounting E asy to mount with 1 screw, (isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 Note 1 TJ = 25°C TJ = 125°C 5.0 25 500 ±100 TJ = 25°C TJ = 125°C 4.5 5.2 6.0 V V µA µA nA V V
BVCES VGE(th) I CES IG E S VCE(sat)
IC IC
= 250 µA, VGE = 0 V = 250 µA, VCE = VGE
VCE = 0.8 · VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
© 2003 IXYS All rights reserved
DS98991(01/03)
IXGH IXGT
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3 5 650 VCE = 25 V, VGE = 0 V, f = 1 MHz 40 22 29 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC25, VGE = 15 V RG = 22 , VCE = 0.5 VCES Note 3 5 10 46 57 190 35 0.44 Inductive load, TJ = 125°C ° IC = IC25, VGE = 15 V RG = 22 , VCE = 0.5 VCES Note 3 48 59 1.2 200 40 0.55 360 70 S pF pF pF nC nC nC ns ns ns ns
Dim.
e
10N170A 10N170A
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC25; VCE = 10 V Note 2
P
0.8 m J ns ns mJ ns ns mJ 1.1 K/W K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-268 Outline
(TO-247)
0.25
Notes: 1. 2. 3.
Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. Pulse test, t 300 µs, duty cycle 2 % Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG.
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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