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Part: IXFR48N50Q
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET(tm) Power MOSFETs ISOplus247(tm) Q-class: 500v, 40a
Company: IXYS Corporation
Datasheet: Download IXFR48N50Q datasheet File size : 96 kB
Request For quote: Find where to buy IXFR48N50Q
Datasheet text preview:
HiPerFET T M Power MOSFETs ISOPLUS247TM, Q-Class
(Electrically Isolated Backside)
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS IXFR 44N50Q IXFR 48N50Q
ID25
RDS(on)
500 V 34 A 120 m 500 V 40 A 110 m
trr 250 ns
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C
Maximum Ratings 500 500 ±20 ±30 44N50Q 48N50Q 44N50Q 48N50Q 44N50Q 48N50Q 34 40 176 192 44 48 60 2.5 5 310 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
Isolated backside*
G = Gate S = Source
D = Drain
* Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF)
l l l
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
IXYS advanced low Qg process Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic diode Applications l DC-DC converters
l l l l
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.0 V 4.0 V ±100 nA TJ = 125°C 44N50Q 48N50Q 100 µA 2 mA 120 m 110 m
Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 250µA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3
Advantages l Easy assembly
l l
Space savings High power density
© 2002 IXYS All rights reserved
98702B (6/02)
IXFR 44N50Q IXFR 48N50Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 30 45 6400 VGS = 0 V, VDS = 25 V, f = 1 MHz 930 220 33 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), Notes 2, 3 22 75 10 190 VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 40 86 0.40 0.15 S pF pF pF ns ns ns ns nC nC nC
Dim. 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
ISOPLUS 247 OUTLINE
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = IT
K/W K/W
A A1 A2 b b1 b2 C D E e L L1 Q R
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 48 192 1.5 250 A A V ns µC A
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
1.4 10
Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 µs, duty cycle d 2 % 3. IXFR44N50Q: IT = 22 A IXFR48N50Q: IT = 24 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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