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Part: IXFR26N50Q
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET(tm) Power MOSFETs ISOplus247(tm) (electrically ISOlated Back Surface) N-channel Enhancement Mode High Dv/dt, Low t, Hdmos(tm) Family: 500v, 24a
Company: IXYS Corporation
Datasheet: Download IXFR26N50Q datasheet File size : 572 kB
Request For quote: Find where to buy IXFR26N50Q
Datasheet text preview:
HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
RDS(on) 0.20 0.23
IXFR 24N50Q (Electrically Isolated Back Surface)
500 V 24 A 500 V 22 A trr 250 ns
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C
Maximum Ratings 500 500 ±20 ±30 26N50Q 24N50Q 26N50Q 24N50Q 26N50Q 24N50Q 24 22 104 96 26 24 30 1.5 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
G
D
Isolated back surface*
G = Gate S = Source
D = Drain
* Patent pending
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab
300 2500 5
Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±1 0 0 TJ = 25°C TJ = 125°C 26N50Q 24N50Q 25 1 0.20 0.23 V V nA µA mA
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2
© 2001 IXYS All rights reserved
98664A (5/01)
IXFR 24N50Q IXFR 26N50Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 14 24 3900 VGS = 0 V, VDS = 25 V, f = 1 MHz 500 130 28 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 1 (External), 30 55 16 95 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 27 40 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS 247 OUTLINE
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 15 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26 104 1.3 TJ = 25°C TJ = 25°C TJ = 25°C 250 1.5 A A V ns µC A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 IF = Is, -di/dt = 100 A/µs, VR = 100 V 0.85 8
Note: 1. Pulse test, t 300 µs, duty cycle d 2 % IXFR26N50Q IT = 13A 2. IT test current: IXFR24N50Q IT = 12A 3. See IXFH26N50Q data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025
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