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Part: IXFR26N50
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET (tm) Power MOSFETs ISOplus247 (tm): 500v, 24a
Company: IXYS Corporation
Datasheet: Download IXFR26N50 datasheet File size : 572 kB
Request For quote: Find where to buy IXFR26N50
Datasheet text preview:
Advanced Technical Information
HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM
IXFR 24N50 (Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
VDSS
ID 2 5
R DS(on) 0.20 W 0.23 W
500 V 24 A 500 V 22 A trr £ 250 ns
Symbol VDSS VDGR VG S VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 26N50 24N50 26N50 24N50 26N50 24N50
Maximum Ratings 500 500 ±20 ±30 26 24 104 96 26 24 30 5 250 -55 ... +150 150 -55 ... +150 V V V V A A A A A A mJ V/ns
ISOPLUS 247TM
G
D
Isolated back surface*
G = Gate S = Source * Patent pending
D = Drain
Features W °C °C °C °C V~ g · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation · Low drain to tab capacitance(<50pF) · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Fast intrinsic Rectifier Applications · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control Advantages · Easy assembly · Space savings · High power density
1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to-tab
300 2500 6
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 26N50 24N50 200 1 0.20 0.23 V V nA mA mA W W
VDSS VGS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 · VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2
IXYS reserves the right to change limits, test conditions, and dimensions.
98526A (2/99)
© 2000 IXYS All rights reserved
1-2
IXFR 24N50 IXFR 26N50
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 11 21 4200 VGS = 0 V, VDS = 25 V, f = 1 MHz 450 135 16 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 1 W (External), 33 65 30 135 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT 28 62 25 45 80 40 160 40 85 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 (IXFR) OUTLINE
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 15 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM IF = Is, -di/dt = 100 A/ms, VR = 100 V Test Conditions VG S = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26 104 1.5 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 250 400 1.5 A A V ns ns mC mC A A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
1 2 10 15
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % IT = 13A 2. IT test current: IXFR26N50 IXFR24N50 IT = 12A 3.See IXFH26N50 data sheet for characteristic curves.
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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