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Part: IXFR21N100Q
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 1000V HiperFET Power MOSFET Q-class
Company: IXYS Corporation
Datasheet: Download IXFR21N100Q datasheet File size : 572 kB
Request For quote: Find where to buy IXFR21N100Q
Datasheet text preview:
HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family
IXFR 21N100Q
VDSS I D25 RDS(on)
= 1000 V = 18 A = 0.50
trr 250 ns
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 18 84 21 60 2.5 10 350 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C V~ g
ISOPLUS 247TM E153432
Isolated backside* G = Gate S = Source D = Drain
* Patent pending Features S ilicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation I XYS advanced low Qg process
L
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
300 2500 5
ow gate charge and capacitances - easier to drive -faster switching L ow drain to tab capacitance(<30pF)
L
ow RDS (on) HDMOSTM process ugged polysilicon gate cell structure
R R
ated for Unclamped Inductive Load Switching (UIS) F ast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3 V 5V ±100 nA TJ = 125°C 100 µA 2 mA 0.5 Applications D C-DC converters
B S
attery chargers
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 2, 3
witched-mode and resonant-mode power supplies D C choppers
A
C motor control
Advantages E asy assembly
S
pace savings igh power density
DS98723B(01/03)
H
© 2003 IXYS All rights reserved
IXFR 21N100Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 16 22 5900 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 90 21 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 1 (External), Notes 2, 3 18 60 12 170 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT Notes 2, 3 38 75 0.35 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 OUTLINE
gfs Ciss Coss Crss td(on) tr td(off) tf QG(on) QGS QGD RthJC RthCK
VDS = 10 V; ID = IT
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; Note 1 IF = IT, VGS = 0 V, Notes 2, 3
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 21 84 1.5 250 A A V ns µC A
IF = IS,-di/dt = 100 A/µs, VR = 100 V
1.4 8
Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 µs, duty cycle d 2 % 3. IT = 10.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXFR 21N100Q
40
TJ = 25OC VGS = 9V 8V 7V 6V
30 25
TJ = 125OC V GS = 9V 8V 7V 6V
30
ID - Amperes
ID - Amperes
20 15 10 5
4V
20
5V
10
4V
5V
0
0
5
10
15
20
0
0
5
10
15
20
25
30
35
VDS - Volts
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
2 .8
VGS = 10V
Fig.2 Output Characteristics @ Tj = 125°C
2.6
VGS = 10V
RDS(ON) - Normalized
RDS(ON) - Normalized
2 .4 2 .0 1 .6 1 .2 0 .8
T J = 25OC T J = 125 C
O
2.2
1.8
ID =21A ID =10.5A
1.4
0
10
20
30
1.0 25
50
75
10 0
1 25
15 0
ID - Amperes
TJ - Degrees C
Fig.3 RDS(on) vs. Drain Current
25 20
Fig.4 Temperature Dependence of Drain to Source Resistance
24 20
ID - Amperes
15 10 5 0
ID - Amperes
16 12
T J = 125oC
8
TJ = 25oC
4 0 3.0
-50
- 25
0
25
50
75
100 12 5 15 0
3. 5
4.0
4. 5
5 .0
5 .5
6.0
6. 5
TC - Degrees C
VGS - Volts
Fig.5 Drain Current vs. Case Temperature
Fig.6 Drain Current vs Gate Source Voltage
© 2003 IXYS All rights reserved
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