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Part: IXFR180N07
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: 100V HiperFET Power MOSFET
Company: IXYS Corporation
Datasheet: Download IXFR180N07 datasheet File size : 585 kB
Request For quote: Find where to buy IXFR180N07
Datasheet text preview:
HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary data sheet
Symbol V DSS VDGR VG S V GSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 70 70 ±20 ±30 180 76 720 180 60 3 5 400 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g
VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns
ISOPLUS 247TM
G
D
Isolated back surface*
G = Gate S = Source * Patent pending
D = Drain
Features · Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation · Low drain to tab capacitance(<25pF) · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Fast intrinsic Rectifier Applications · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control Advantages · Easy assembly · Space savings · High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 100 mA 2 mA 6 mW
V DSS V GS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0 VDS = VDSS V GS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
IXYS reserves the right to change limits, test conditions, and dimensions.
98585A (6/99)
© 2000 IXYS All rights reserved
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IXFR 180N07
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 55 90 9400 VGS = 0 V, VDS = 25 V, f = 1 MHz 4600 2550 65 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 ID25 RG = 1 W (External) 90 140 55 420 VGS = 10 V, VDS = 0.5 · VDSS, ID = 0.5 ID25 65 220 0.30 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 (IXFR) OUTLINE
gf s C iss Coss C rss td(on) tr td(off) tf Qg(on) Q gs Qgd RthJC RthCK
VDS = 10 V; ID = 60A
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VG S = 0 V Repetitive; pulse width limited by TJM IF = 100A, VGS = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 180 720 1.3 250 A A V ns mC A
IF = 50A,-di/dt = 100 A/ms, VR = 50 V
1.2 10
Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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