|
|
Part: IXFR15N80Q
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: HiperFET (tm) Power MOSFETs ISOplus247 (tm) Q Class: 800v, 13a
Company: IXYS Corporation
Datasheet: Download IXFR15N80Q datasheet File size : 585 kB
Request For quote: Find where to buy IXFR15N80Q
Datasheet text preview:
HiPerFETTM Power MOSFETs IXFR 15N80Q VDSS ISOPLUS247TM Q Class ID25
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Preliminary data
Symbol V DSS VDGR VG S V GSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 13 60 15 30 1.0 5 250 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A mJ J V/ns W °C °C °C °C V~ g
G D
RDS(on)
= 800 V = 13 A = 0.60 W
trr £ 250 ns
ISOPLUS 247TM
Isolated back surface*
G = Gate S = Source * Patent pending Features
D = Drain
· Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation · Low drain to tab capacitance(<50pF) · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (UIS) rated · Fast intrinsic Rectifier
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.60 V V nA mA mA W Advantages · Easy assembly · Space savings · High power density · DC-DC converters · Battery chargers · Switched-mode and resonant-mode power supplies · DC choppers · AC motor control
VDSS VGS(th) I GSS IDSS RDS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 7.5A Note 2
IXYS reserves the right to change limits, test conditions, and dimensions.
98590A (7/00)
© 2000 IXYS All rights reserved
1-2
IXFR 15N80Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 8 16 4300 VGS = 0 V, VDS = 25 V, f = 1 MHz 360 60 18 VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A RG = 1 W (External), 27 53 16 90 VGS = 10 V, VDS = 0.5 VDSS, ID = 7.5A 20 30 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection
ISOPLUS 247 (IXFR) OUTLINE
gfs C iss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = 7.5A
Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VG S = 0 V Repetitive, Note 1 IF = Is, 100A, VGS = 0 V, Note 2
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15 60 1.5 250 A A V ns mC A
IF = Is, -di/dt = 100 A/ms, VR = 100 V
0.8 7.5
Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
|
|
|
