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Part: IXFR12N100Q
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 1000V HiperFET Power MOSFET
Company: IXYS Corporation
Datasheet: Download IXFR12N100Q datasheet File size : 92 kB
Request For quote: Find where to buy IXFR12N100Q
Datasheet text preview:
HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM Q CLASS
VDSS
ID25
RDS(on) 1.1 1.20
12N100Q 1000 V 10 A IXFR 10N100Q 1000 V 9A (Electrically Isolated Back Surface) trr 300 µs
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ±20 ±30 10 9 48 40 12 10 30 5 250 -55 ... +150 150 -55 ... +150 300 2500 5 V V V V A A A A A A mJ V/ns W °C °C °C °C V~ g Features
ISOPLUS 247TM
Isolated back surface*
G = Gate S = Source
D = Drain
* Patent pending
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<50pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2.5 5.5 ±1 0 0 TJ = 25°C TJ = 125°C 12N100 10N100 50 1 1.1 1.2 V V nA µA mA
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 3mA VDS = VGS, ID = 4mA VGS = ±20 VDC, VDS = 0 VDS = 0.8·VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2
DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
Advantages
Easy assembly Space savings High power density
© 2002 IXYS All rights reserved
DS98589-B (10/02)
IXFR 1 0 N 1 0 0 Q IXFR 1 2 N 1 0 0 Q
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 4 10 2900 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 50 20 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 1 (External), 23 40 15 90 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT 30 40 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS 247 OUTLINE
gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 15 V; ID = IT
Source-Drain Diode Symbol IS ISM V SD t rr QRM IRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 48 1.3 200 300 A A V ns µC A
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
IF = Is, -di/dt = 100 A/µs, VR = 100 V
1.6 7
Note: 1. Pulse test, t 300 µs, duty cycle d 2 % IXFR10N100 IT = 5A 2. IT test current: IXFR12N100 IT = 6A
Note: Please see IXFH12N100Q Data Sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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