|
|
Part: IXFR12N100F
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> F-Class HiPerRF Capable MOSFETs
Description:
Company: IXYS Corporation
Datasheet: Download IXFR12N100F datasheet File size : 92 kB
Request For quote: Find where to buy IXFR12N100F
Datasheet text preview:
HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM
VDSS
ID25
RDS(on) 1.05 1.20
12N100F 1000 V 10 A IXFR 10N100F 1000 V 9A F-Class: MegaHertz Switching trr 250 ns (Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
Preliminary Data Sheet Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight Symbol Test Conditions 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C TC = 25°C, Pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS TJ 150°C, RG = 2 TC = 25°C 12N100 10N100 12N100 10N100 12N100 10N100 Maximum Ratings 1000 1000 ±20 ±30 10 9 48 40 12 10 31 1 5 250 -40 ... +150 150 -40 ... +150 300 2500 5 V V V V A A A A A A mJ J V/ns W °C °C °C °C V~ g ISOPLUS 247TM (IXFR)
G
(TAB) D
Isolated back surface* G = Gate S = Source D = Drain TAB = Drain
Features R F capable MOSFETs D ouble metal process for low gate resistance U nclamped Inductive Switching (UIS) rated L ow package inductance - easy to drive and to protect F ast intrinsic rectifier Applications D C-DC converters S witched-mode and resonant-mode power supplies, >500kHz switching D C choppers 1 3.5 MHz industrial applications P ulse generation L aser drivers RF amplifiers Advantages I SOPLUS 247TM package for clip or spring mounting S pace savings H igh power density
98934(7/02)
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 V 5.5 V ±100 nA TJ = 25°C TJ = 125°C 12N100 10N100 50 µA 1.5 mA 1.05 1.2
V DSS VGS(th) IG S S I DSS RDS(on)
VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1 & 2
© 2002 IXYS All rights reserved
IXFR 10N100F IXFR 12N100F
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 8 12 2700 VGS = 0 V, VDS = 25 V, f = 1 MHz 305 93 12 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT RG = 2 (External) 9.8 31 12 77 VGS = 10 V, VDS = 0.5 · VDSS, ID = IT 16 42 0.50 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
PLUS 247TM Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 10 V; ID = IT
Source-Drain Diode Symbol IS ISM V SD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 12 48 1.5 250 A A V ns µC A
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IF = 25 A,-di/dt = 100 A/µs, VR = 100 V
0.8 7
Note: 1. Pulse test, t 300 µs, duty cycle d 2 % 2. IT test current: IXFR10N100 IT = 5A IXFR12N100 IT = 6A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
|
|
|
