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Part: IXEH40N120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> NPT3 IGBT
Description:
Company: IXYS Corporation
Datasheet: Download IXEH40N120 datasheet File size : 87 kB
Request For quote: Find where to buy IXEH40N120
Datasheet text preview:
IXEH 40N120 IXEH 40N120D1
NPT3 IGBT
I C25 = 60 A = 1200 V VCES VCE(sat) typ. = 2.4 V
C
C
TO-247 AD
G E
G E
G C E C (TAB)
IXEH 40N120
IXEH 40N120D1
IGBT Symbol V CES V GES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 ; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 60 40 50 V CES 10 300 V V A A A µs W
Features · NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits · optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current · TO-247 package - industry standard outline - epoxy meets UL 94V-0 Applications
Symbol
Conditions (TVJ
Characteristic Values = 25°C, unless otherwise specified) min. typ. max. 2.4 2.8 4.5 0.4 200 85 50 440 50 6.1 3.0 2 250 3.0 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.42 K/W
VCE(sat) VGE(th) I CES IG E S td(on) tr td(off) tf Eon Eoff C ies QGon RthJC
IC = 40 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
· AC drives · DC drives and choppers · Uninteruptible power supplies (UPS) · switched-mode and resonant-mode power supplies · inductive heating, cookers
Inductive load, TVJ = 125°C VCE = 600 V; IC = 40 A VGE = ±15 V; RG = 39
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 25 A
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
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IXEH 40N120 IXEH 40N120D1
Diode [D1 version only] Equivalent Circuits for Simulation
Conduction
Symbol IF25 IF90
Conditions TC = 25°C TC = 90°C
Maximum Ratings 60 35 A A
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 m Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 m Thermal Response
Symbol VF IRM t rr Erec(off) RthJC Component Symbol TV J Tstg Md Symbol RthCH Weight
Conditions IF = 40 A; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V
Characteristic Values min. typ. max. 2.6 2.0 51 180 1.8 3.0 V V A ns mJ 1.0 K/W
Conditions
Maximum Ratings -55...+150 -55...+150 °C °C Nm
IGBT Cth1 = 0.007 J/K; Rth1 = 0.215 K/W Cth2 = 0.187 J/K; Rth2 = 0.205 K/W Diode Cth1 = 0.006 J/K; Rth1 = 0.649 K/W Cth2 = 0.113 J/K; Rth2 = 0.351 K/W
mounting torque Conditions with heatsink compound
0.8...1.2
TO-247 AD Outline Characteristic Values min. typ. max. 0.25 6 K/W g
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
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© 2003 IXYS All rights reserved
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IXEH 40N120 IXEH 40N120D1
120
A 120 A 100 IC 80 60
11 V 11 V 13 V
VGE = 17 V
15 V 13 V
VGE = 17 V
15 V
100
IC
80 60 40 20 0 0 1 2 3 4
VCE
40
9V TVJ = 25°C
20 0
9V TVJ = 125°C
5
6V7
0
1
2
3
4
5
VCE
6V7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
A
VCE = 20 V
100
IC IF
90 A 75 60 45
TVJ = 125°C TVJ = 25°C
80 60 40
TVJ = 125°C
30 15
TVJ = 25°C
20 0 4 6 8 10 12
VGE
0
14 V 16
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of free wheeling diode
20
V
10 K/W ZthJC 1
diode [D1 version only] I GB T
15
VGE
10
0.1
5
VCE = 600 V IC = 35 A
0.01
single pulse
0 0 40 80 120 160nC
QG
0.001
MUBW3 51 2E7
200
0.00001 0.0001
0.001
0.01
0.1
1
s 10
t
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. transient thermal impedance
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© 2003 IXYS All rights reserved
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Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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