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Part: IXDT30N120D1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1200V High Voltage Igbt With Optional Diode
Company: IXYS Corporation
Datasheet: Download IXDT30N120D1 datasheet File size : 373 kB
Request For quote: Find where to buy IXDT30N120D1
Datasheet text preview:
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
G
IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1
C G C
VC E S = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V
TO-247 AD (IXDH)
E IXDH 30N120 IXDT 30N120
E IXDH 30N120 D1 IXDT 30N120 D1
G C E
C (TAB)
TO--268 AA (IXDT) Symbol V CES V CGR V GES VGEM IC 2 5 IC 9 0 ICM RBSOA tSC (SCSOA) PC TJ Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 47 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 60 38 76 ICM = 50 VCEK < VCES 10 300 135 -55 ... +150 -55 ... +150 300 V V V V A A A A µs W W °C °C °C
q q
G E C (TAB)
G = Gate, C = Collector ,
E = Emitter TAB = Collector
Features
q q q q q q
q q q
NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages
Advantages Space savings High power density IXDT: surface mountable high power package
1.1/10 Nm/lb.in. 6 g
q
Typical Applications
q
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 2.5 6.5 V V
q q q q
V (BR)CES VGE(th) IC E S IG E S VCE(sat)
VGE = 0 V IC = 1 mA, VCE = VGE VCE = VCES
AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
1.5 mA mA ± 500 nA
VCE = 0 V, VGE = ± 20 V IC = 30 A, VGE = 15 V 2.4
2.9
V
031
© 2000 IXYS All rights reserved
1-4
IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1650 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 30 A, VGE = 15 V, VCE = 0.5 VCES 250 110 120 100 Inductive load, TJ = 125°C IC = 30 A, VGE = ±15 V, VCE = 600 V, RG = 47 W 70 500 70 4.6 3.4 pF pF pF nC ns ns ns ns mJ mJ 0.42 K/W Package with heatsink compound 0.25 K/W
Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-247 AD Outline
Cies Coes Cres Qg td ( o n ) tr td ( o f f ) tf Eon Eoff RthJC RthCK
Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM t rr t rr RthJC Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 2.0 2.7 V V A A A ns ns 1 K/W
IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 90°C IF = 30 A, -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V, TJ = 125°C IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
60 35 20 200 40
TO-268 AA Outline
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4
Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10
Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
© 2000 IXYS All rights reserved
2-4
IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1
60
TJ = 25°C VGE=17V 15V 13V 11V
60
TJ = 125°C
VGE=17V 15V 13V
A 50 IC
A0 5 IC 40
40 30 20
9V
11V
30 20 10 0 0.0
9V
10 0 0.0
0.5
1.0
1.5
2.0
2.5
VCE
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
60
A 50 IC
VCE = 20V TJ = 25°C
80 A0 7 IF 60 50 40 30 20
TJ = 25°C TJ = 125°C
40 30 20 10 0 5 6 7 8 9 10
VGE
10 0
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
60
A IRM
trr
20 V VCE = 600V
IC = 25A
300
ns trr
VGE 15
40
200
10 20 5
TJ = 125°C VR = 600V IF = 30A
IRM
100
IXDH30N120
0 0 20 40 60 80 100 120 140 nC QG
0 0 200 400
600 8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
3-4
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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