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Part: IXDP20N60BD1

Category:
 Discrete
   -> IGBTs (Insulated Gate Bipolar Transistors)
             -> High Voltage 1200 Volts <

Description: High Voltage Igbt With Optional Diode High Speed, Low Saturation Voltage

Company: IXYS Corporation

Datasheet: Download IXDP20N60BD1 datasheet     File size : 373 kB

Request For quote: Find where to buy IXDP20N60BD1



Datasheet text preview:
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 20N60 B VC E S = 600 V = 32 A IXDP 20N60 BD1 IC25 VCE(sat) typ = 2.2 V
C G G
C
TO-220 AB
G C E
C (TAB)
E IXDP 20N60B
E IXDP 20N60B D1 G = Gate, C = Collector , E = Emitter TAB = Collector
Symbol V CES V CGR V GES VGEM IC 2 5 IC 9 0 ICM RBSOA tSC (SCSOA) PC TJ Tstg
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp =1 ms VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = 600 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 600 600 ±20 ±30 32 20 40 ICM = 60 VCEK < VCES 10 140 50 -55 ... +150 -55 ... +150 300 0.4 - 0.6 2 V V V V A A A A
Features
q q q q q q
q q q
NPT IGBT technology low switching losses low tail current no latch up short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package
Advantages µs W W Typical Applications °C
q q q
Space savings High power density
°C °C Nm g
q q q q
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque
AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3 TJ = 25°C TJ = 125°C 0.7 5 V V
V (BR)CES VGE(th) IC E S IG E S VCE(sat)
VGE = 0 V IC = 0.4 mA, VCE = VGE
VCE = VCES VCE = 0 V, VGE = ± 20 V IC = 20 A, VGE = 15 V
0.1 mA mA ± 500 nA
2.2
2.8
V
021
© 2000 IXYS All rights reserved
1-4
IXDP 20N60 B IXDP 20N60 BD1
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 20 A, VGE = 15 V, VCE = 480 V 85 50 70 25 Inductive load, TJ = 125°C IC = 20 A, VGE = ±15 V, VCE = 300 V, RG = 22 W 30 260 55 0.9 0.4 Package with heatsink compound 0.5 pF pF pF nC ns ns ns ns mJ mJ 0.9 K/W K/W
Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110
TO-220 AB Outline
Cies Coes Cres Qg td ( o n ) tr td ( o f f ) tf Eon Eoff RthJC RthCH
Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM t rr t rr RthJC Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.1 1.6 2.4 V V A A A ns ns 2.5 K/W
IF = 20 A, VGE = 0 V IF = 20 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 90°C IF = 10 A, -diF/dt = 400 A/µs, VR = 300 V VGE = 0 V, TJ = 125°C IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
25 15 11 80 40
© 2000 IXYS All rights reserved
2-4
IXDP 20N60 B IXDP 20N60 BD1
40
A IC
VGE= 17V 15V 13V 11V 9V
40 A IC 30
VGE= 17V 15V 13V 11V 9V
30
20
20
10
TJ = 25°C
10
TJ = 125°C
0 0 1 2 3
VCE
0
4
V
5
0
1
2
3
VCE
4
V
5
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
40
A IC
40 A IF 30
30
20
20
TJ = 125°C TJ = 25°C
10
TJ = 125°C TJ = 25°C VCE = 20V
10
0 3 4 5 6 7
VGE
0
8
9 V 10
0
1
2 VF
V
3
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
30
trr IRM
15
V
120
ns trr
12
VGE
A 25 IRM
20 9 15 6 10 3 0 0 20 40 60
QG
VCE = 480V IC = 15A
80
40
TJ = 125°C VR = 300V IF = 10A
IXDP20N06B
5 0
80
nC 100
0
200
400
600 8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
3-4


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