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Part: IXDN75N120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1200V High Voltage Igbt
Company: IXYS Corporation
Datasheet: Download IXDN75N120 datasheet File size : 373 kB
Request For quote: Find where to buy IXDN75N120
Datasheet text preview:
High Voltage IGBT
IXDN 75N120
VC E S = 1200 V = 150 A IC25 VCE(sat) typ = 2.2 V
Short Circuit SOA Capability Square RBSOA
C G
miniBLOC, SOT-227 B E153432
G
E
E
E E C
Symbol V CES V CGR V GES VGEM IC 2 5 IC 9 0 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 15 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 15 W, non repetitive TC = 25°C IGBT
Maximum Ratings 1200 1200 ±20 ±30 150 95 190 ICM = 150 VCEK < VCES 10 660 2500 -40 ... +150 -40 ... +150 V V V V A A A A µs W V~ °C °C
E = Emitter x, G = Gate,
C = Collector E = Emitter x
x Either Emitter terminal can be used as Main or Kelvin Emitter
Features
q q q q q q
q q
50/60 Hz; IISOL £ 1 mA
NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled International standard package miniBLOC
Advantages
q q q
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Space savings Easy to mount with 2 screws High power density
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 6 6.5 V V
Typical Applications
q q q
V (BR)CES VGE(th) IC E S IG E S VCE(sat)
VGE = 0 V IC = 3 mA, VCE = VGE VCE = VCES
q q
AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
4 mA mA ± 500 nA
VCE = 0 V, VGE = ± 20 V IC = 75 A, VGE = 15 V 2.2
2.7
V
031
© 2000 IXYS All rights reserved
1-4
IXDN 75N120
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 5500 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 75 A, VGE = 15 V, VCE = 0.5 VCES 750 330 360 100 Inductive load, TJ = 125°C IC = 75 A, VGE = ±15 V, VCE = 600 V, RG = 15 W 50 650 50 12.1 10.5 pF pF pF nC ns ns ns ns mJ mJ 0.19 K/W Package with heatsink compound 0.1 K/W
Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
miniBLOC, SOT-227 B
Cies Coes Cres Qg td ( o n ) tr td ( o f f ) tf Eon Eoff RthJC RthCK
M4 screws (4x) supplied
© 2000 IXYS All rights reserved
2-4
IXDN 75N120
175 1A0 5
IC 125 175
TJ = 125°C
TJ = 25°C
VGE=17V 15V 13V 11V
1A0 5 IC 125 100 75
VGE=17V 15V 13V 11V
100 75 50 25 0 0.0 0.5 1.0 1.5 2.0 2.5
VCE
9V
50 25 0 0.0
9V
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
VCE = 20V
1A5 2
IC
TJ = 25°C
300 A 250 IF 200 150 100 50 0
TJ = 125°C TJ = 25°C
100 75 50 25 0 5 6 7 8 9 10
VGE
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
20 V
VGE 15
120
VCE = 600V IC = 75A
300
ns
trr
A IRM
trr
80
200
10 40 5
IRM TJ = 125°C VR = 600V IF = 75A
100
IXDN75N120
0 0 100 200 300
QG
0 0 200 400 600
400
nC
8A0 s 0 /m -di/dt
0
1000
Fig. 4 Typ. turn on gate charge
© 2000 IXYS All rights reserved
3-4
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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