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Part: IXDN55N120
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
Description: 1200V High Voltage Igbt With Optional Diode
Company: IXYS Corporation
Datasheet: Download IXDN55N120 datasheet File size : 373 kB
Request For quote: Find where to buy IXDN55N120
Datasheet text preview:
High Voltage IGBT with optional Diode
Short Circuit SOA Capability Square RBSOA
IXDN 55N120 VC E S = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = 2.3 V
C G G
C
miniBLOC, SOT-227 B E153432
G
E
E IXDN 55N120
E IXDN 55N120 D1 C E = Emitter x, G = Gate, C = Collector E = Emitter x E
Symbol V CES V CGR V GES VGEM IC 2 5 IC 9 0 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode
Maximum Ratings 1200 1200 ±20 ±30 100 62 124 ICM = 100 VCEK < VCES 10 450 220 2500 -40 ... +150 -40 ... +150 V V V V A A A A µs W W V~ °C °C
x Either Emitter terminal can be used as Main or Kelvin Emitter
Features
q q q q q q
50/60 Hz; IISOL £ 1 mA
q q q
NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package miniBLOC
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Advantages
q q q
Space savings Easy to mount with 2 screws High power density
Symbol
Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 6 6.5 V V
Typical Applications
q q q q
V (BR)CES VGE(th) IC E S IG E S VCE(sat)
VGE = 0 V IC = 2 mA, VCE = VGE VCE = VCES
q
3.8 mA mA ± 500 nA
AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0 V, VGE = ± 20 V IC = 55 A, VGE = 15 V 2.3
2.8
V
032
© 2000 IXYS All rights reserved
1-4
IXDN 55N120 IXDN 55N120 D1
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3300 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 500 220 240 100 Inductive load, TJ = 125°C IC = 55 A, VGE = ±15 V, VCE = 600 V, RG = 22 W 70 500 70 8.4 6.2 pF pF pF nC ns ns ns ns mJ mJ 0.28 K/W Package with heatsink compound 0.1 K/W
Dim. A B C D E F G H Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08
miniBLOC, SOT-227 B
Cies Coes Cres Qg td ( o n ) tr td ( o f f ) tf Eon Eoff RthJC RthCK
M4 screws (4x) supplied
Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM t rr t rr RthJC Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.4 1.9 2.6 V V A A A ns ns 0.6 K/W
J K L M N O P Q R S T U V W
IF = 55 A, VGE = 0 V IF = 55 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 90°C IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V VGE = 0 V, TJ = 125°C IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V
110 60 40 200 40
© 2000 IXYS All rights reserved
2-4
IXDN 55N120 IXDN 55N120 D1
120 TJ = 25°C A 100
IC 120 A TJ = 125°C 100 IC 80
11V 11V
VGE=17V 15V 13V
VGE=17V 15V 13V
80 60 40
9V
60 40 20 0 0.0
9V
20 0 0.0
0.5
1.0
1.5
2.0
2.5
VCE
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120 VCE = 20V A TJ = 25°C 100
IC
180
TJ = 125°C
1A 0 5 IF
TJ = 25°C
80 60 40 20 0 5 6 7 8 9 10
VGE
120 90 60 30 0
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
20 V
VGE 15
120
VCE = 600V IC = 50A
300
ns
trr
A IRM
trr
80
200
10 40 5
TJ = 125°C VR = 600V IF = 50A
IRM
100
0 0 50 100 150 200
QG
0 250 nC 0 200 400 600
IXDN55N120
8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
3-4
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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