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Part: IXDI414PI
Category:
Discrete
-> Transistors
-> Power Integrated Ics
Description: 14Amp Low-side Ultrafast MOSFET Driver
Company: IXYS Corporation
Datasheet: Download IXDI414PI datasheet File size : 373 kB
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Datasheet text preview:
IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI 14 Ampere Low-Side Ultrafast MOSFET and IGBTDrivers Features
· Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes · Latch-Up Protected Over Entire Operating Range · High Peak Output Current: 14A Peak · Wide Operating Range: 4.5V to 35V · High Capacitive Load Drive Capability: 15nF in <30ns · Matched Rise And Fall Times · Low Propagation Delay Time · Low Output Impedance · Low Supply Current
General Description
The IXDI414/IXDN414 are high speed high current gate drivers specifically designed to drive the largest MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDI/N414 can source and sink 14A of peak current, while producing voltage rise and fall times of less than 30ns, to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is compatible with TTL or CMOS and is fully immune to latch up over the entire operating range. Designed with small internal delays, a patent-pending circuit virtually eliminates transistor cross conduction and current shootthrough. Improved speed and drive capabilities are further enhanced by very low, matched rise and fall times. The IXDN414 is configured as a non-inverting gate driver and the IXDI414 is an inverting gate driver. The IXDN414/IXDI414 family are available in standard 8 pin P-DIP (PI), 5-pin TO-220 (CI), TO-263 (YI) and 14-pin SOIC (SI) surface-mount packages.
Applications
· · · · · · · · · Driving MOSFETs and IGBTs Motor Controls Line Drivers Pulse Generators Local Power ON/OFF Switch Switch Mode Power Supplies (SMPS) DC to DC Converters Pulse Transformer Driver Class D Switching Amplifiers
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
Vcc
Vcc
IN
ANTI-CROSS C O N D U C TI O N CIRCUIT *
P OUT N
GND
GND
* Patent Pending Copyright © IXYS CORPORATION 2003
First Release
IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI
Figure 2 - IXDI414 Inverting 14A Gate Driver Functional Block Diagram
Vc c
Vcc
IN
ANTI-CRO SS CONDUCTIO N CIRCUIT *
P OUT N
GND
GND
Pin Description And Configuration
SYMBOL VCC IN OUT GND FUNCTION Supply Voltage Input Output Ground DESCRIPTION Positive power-supply voltage input. This pin provides power to the entire chip. The range for this voltage is from 4.5V to 25V. Input signal-TTL or CMOS compatible. Driver Output. For application purposes, this pin is connected via an external resistor to a Gate of a MOSFET/IGBT. The system ground pin. Internally connected to all circuitry, this pin provides ground reference for the entire chip. This pin should be connected to a low noise analog ground plane for optimum performance.
VCC 8 1 NC 2 NC 3 VCC 4 IN 5 NC 6 GND 7 NC I X D (1) 4 1 4 S I NC 14 NC 1 3 VCC 1 2 OUT 1 1 OUT 1 0 GND 9 NC 8
1 VCC 2 IN 3 NC 4 GND
I X D (1) 4 1 4 P I
(1) (1)
OUT 7 OUT 6 GND 5
TO220 (CI, CM) TO263 (YI, YM)
8 PIN DIP (PI)
16 PIN SOIC
Temp. Range -40°C to +85°C -40°C to +85°C -40°C to +85°C -40°C to +85°C -40°C to +85°C -40°C to +85°C Inverting Non Inverting Configuration
ORDERING INFORMATION
Part Number IXDN414PI IXDN414SI IXDN414CI IXDN414YI IXDI414PI IXDI414SI IXDI414CI IXDI414YI Package Type 8-Pin PDIP 14-Pin SOIC 5-Pin TO-220 5-Pin TO-263 8-Pin PDIP 14-Pin SOIC 5-Pin TO-220 5-Pin TO-263
NOTES 1: Either "I" or "N"; 2: Mounting or solder tabs on all packages are connected to ground
* Patent Pending
2
IXDN414PI / N414CI / N414YI / N414SI IXDI414PI / I414CI / I414YI / I414SI Absolute Maximum Ratings (Note 1)
Parameter Supply Voltage All Other Pins Power Dissipation Power Dissipation, TAMBIENT 25oC
8 Pin PDIP (PI) TO220 (CI) TO263 (YI) TCASE 85oC : TO220 (CI), TO263 (YI)* 72W 975mW 2W 7.6mW/K 0.1W/K
Value 40V -0.3V to VCC + 0.3V
Parameter
Operating Ratings
Maximum Junction Temperature Operating Temperature Range Thermal Resistance (Junction To Case) TO220 (CI) TO263 (YI) 14-Pin SOIC (SI) Thermal Resistance (Junction to Ambient) 8-Pin PDIP (PI) 14-Pin SOIC TO-220 (CI), TO-263 (YI) * Subject to internal lead current limit IDC
Value 150oC -40oC to 85oC
0.55 K/W 3 K/W
Derating Factors (to Ambient)
8 Pin PDIP (PI) TO220 (CI), TO263 (YI)
150 K/W 120 K/W 10 K/W
Storage Temperature Soldering Lead Temperature (10 seconds maximum)
-65oC to 150oC 300oC
Electrical Characteristics
Unless otherwise noted, TA = 25 oC, 4.5V VCC 35V . All voltage measurements with respect to GND. Device configured as described in Test Conditions.
Symbol VIH VIL VIN IIN VOH VOL ROH ROL IPEAK IDC tR tF tONDLY
Parameter High input voltage Low input voltage Input voltage range Input current High output voltage Low output voltage Output resistance @ Output high Output resistance @ Output Low Peak output current Continuous output current (1) Rise time Fall time
(1)
Test Conditions
Min 3.5
Typ
Max 0.8
Units V V V µA V
-5 0V VIN VCC -10 VCC - 0.025
VCC + 0.3 10
0.025 IOUT = 10mA, VCC = 18V IOUT = 10mA, VCC = 18V VCC is 18V 8 Pin Dip (PI) (Limited by pkg power dissipation) TO220 (CI), TO263 (YI) CL=15nF Vcc=18V CL=15nF Vcc=18V 600 600 14 3 4 27 25 1000 1000
V m m A A A ns ns
22 20
On-time propagation 30 33 ns CL=15nF Vcc=18V (1) delay N Operating the device beyond parameters nF Vcc=18V damage to the device. tOFFDLY ote 1: Off-time propagation 31 ns CL=15 with listed "Absolute Maximum Ratings" may cause permanent34 (1) Typical values indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. The delay guaranteed specifications apply only for the test conditions listed. Exposure to absolute maximum rated conditions for extended periods may VCC affect device reliability. voltage Power supply 4.5 18 35 V ICC Power supply current V = 3.5V 1 3 mA CAUTION: These devices are sensitiveINto electrostatic discharge; follow proper ESD procedures when handling and assembling this component. VIN = 0V 0 10 µA
Specifications subject to change without VIN = + notice
VCC
10
µA
(1)
See Figures 3a and 3b
3
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