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Part: IS63LV1024L-10J
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 128Kx8
Company: Integrated Silicon Solution
Datasheet: Download IS63LV1024L-10J datasheet File size : 160 kB
Request For quote: Find where to buy IS63LV1024L-10J
Datasheet text preview:
IS63LV1024L
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
FEATURES
· High-speed access times: 8, 10, 12 ns · High-performance, low-power CMOS process · Multiple center power and ground pins for greater noise immunity · Easy memory expansion with CE and OE options · CE power-down · Fully static operation: no clock or refresh required · TTL compatible inputs and outputs · Single 3.3V power supply · Packages available: 32-pin 300-mil SOJ 32-pin 400-mil SOJ
ISSI
AUGUST 2002
®
32-pin TSOP (Type II) 32-pin STSOP (Type I) 36-pin BGA (8mmx10mm)
DESCRIPTION
The ISSI IS63LV1024L is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The IS63LV1024L is fabricated using ISSI's high-performance CMOS technology. This highly reliable p r o c e s s coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS63LV1024L operates from a single 3.3V power supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 08/07/02
1
IS63LV1024L
PIN CONFIGURATION
32-Pin SOJ
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type II) (T) 32-Pin STSOP (Type I) (H)
®
A0 A1 A2 A3 CE I/O0 I/O1 Vcc GND I/O2 I/O3 WE A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A16 A15 A14 A13 OE I/O7 I/O6 GND Vcc I/O5 I/O4 A12 A11 A10 A9 A8
A0 A1 A2 A3 CE I/O0 I/O1 Vcc GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/o7 I/O6 GND Vcc I/O5 I/O4 A12 A11 A10 A9 A8
PIN DESCRIPTIONS
A0-A16 CE OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground
PIN CONFIGURATION
36-mini BGA (B) (8 mm x 10 mm)
1 2 3 4 5 6
A B C D E F G H
A0 I/O4 I/O5 GND Vcc I/O6 I/O7 A9
A1 A2
NC WE NC
A3 A4 A5
A6 A7
A8 I/O0 I/O1 Vcc GND
NC OE A10 CE A11
NC A16 A12 A15 A13
I/O2 I/O3 A14
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 08/07/02
IS63LV1024L
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X H H L CE H L L L OE X H L X I/O Operation High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2
ISSI
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TBIAS TSTG PT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation Value 0.5 to Vcc + 0.5 55 to +125 65 to +150 1.0 Unit V °C °C W
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VCC 3.3V ± 0.3V 3.3V ± 0.15V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter VOH V OL VIH VIL I LI I LO Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VCC GND VOUT VCC, Outputs Disabled Com. Ind. Com. Ind. Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 -- 2.2 0.3 1 5 1 5 Max. -- 0.4 VCC + 0.3 0.8 1 5 1 5 Unit V V V V µA µA
Notes: 1. VIL = 3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 08/07/02
3
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