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Part: IS61C64B-10J
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 64K 8Kx8
Company: Integrated Silicon Solution
Datasheet: Download IS61C64B-10J datasheet File size : 107 kB
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Datasheet text preview:
IS61C64B
8K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
· High-speed access time: 10, 12, and 15 ns · Automatic power-down when chip is deselected · CMOS low power operation -- 450 mW (typical) operating -- 250 µW (typical) standby · TTL compatible interface levels · Single 5V power supply · Fully static operation: no clock or refresh required · Three state outputs · One Chip Enables (CE) for increased speed
ISSI
July 2002
®
DESCRIPTION The ISSI IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. Easy memory expansion is provided by using one Chip Enable input, CE. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS61C64B is packaged in the JEDEC standard 28-pin, 300-mil SOJ, and TSOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A12
DECODER
256 X 256 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE CONTROL CIRCUIT
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 07/01/02
IS61C64B
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE H X L L L OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
ISSI
®
PIN CONFIGURATION
28-Pin SOJ
PIN CONFIGURATION
28-Pin TSOP (Type 1)
* A12
A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE
*8 A
A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
OE A11 A9 A8 WE VCC A12 A7 A6 A5 A4 A3
* *
22 23 24 25 26 27 28 1 2 3 4 5 6 7
21 20 19 18 17 16 15 14 13 12 11 10 9 8
A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
PIN DESCRIPTIONS
A0-A12 CE OE WE I/O0-I/O7 * Vcc GND Address Inputs Chip Enable 1 Input Output Enable Input Write Enable Input Input/Output Must be tied to either Vcc or GND Power Ground
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 07/01/02
IS61C64B
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to +7.0 10 to +85 65 to +150 1.0 20 Unit V °C °C W mA
ISSI
®
1 2 3 4
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range Commercial Ambient Temperature 0°C to +70°C Speed 10 ns 12 ns 15 ns VCC 5V ± 5% 5V ± 10% 5V ± 10%
5 6
Min. 2.4 -- 2.2 0.5 Max. -- 0.4 VCC + 0.5 0.8 2 2 Unit V V V V µA µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VI L I LI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND - VIN - VCC GND - VOUT - VCC, Outputs Disabled Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA
7 8 9 10 11 12
2 2
Notes: 1. VIL = 3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 07/01/02
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