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Part: IS61C3216-20KI
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 32K X 16 High-speed CMOS Static RAM
Company: Integrated Silicon Solution
Datasheet: Download IS61C3216-20KI datasheet File size : 105 kB
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Datasheet text preview:
IS61C3216
32K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
· High-speed access time: 10, 12, 15, and 20 ns · CMOS low power operation -- 450 mW (typical) operating -- 250 µW (typical) standby · TTL compatible interface levels · Single 5V ± 10% power supply · I/O compatible with 3.3V device · Fully static operation: no clock or refresh required · Three state outputs · Industrial temperature available · Available in 44-pin 400-mil SOJ package and 44-pin TSOP (Type II)
ISSI
®
JANUARY 1998
DESCRIPTION The ISSI IS61C3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields fast access times with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61C3216 is packaged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16 MEMORY ARRAY
VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 04/17/01
1
IS61C3216
PIN CONFIGURATIONS
44-Pin SOJ
NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
ISSI
44-Pin TSOP (TYPE II)
NC A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 Vcc GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
®
A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND Vcc I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
PIN DESCRIPTIONS
A0-A14 I/O0-I/O15 CE OE WE Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input LB UB NC Vcc GND Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O0-I/O7 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN I/O8-I/O15 High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN Vcc Current ISB1, ISB2 ICC ICC
Write
ICC
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 04/17/01
IS61C3216
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VCC VTERM T STG PT IOUT Parameter Supply Voltage with Respect to GND Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to +7.0 0.5 to +7.0 65 to +150 1.5 20 Unit V V °C W mA
ISSI
®
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1 2 3 4 5
OPERATING RANGE
Range Ambient Temperature Commercial 0°C to +70°C Industrial 40°C to +85°C Speed -10, -12 -15, -20 -12 -15, -20 VCC 5V ± 5% 5V ± 10% 5V ± 5% 5V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) GND - VIN - VCC GND - VOUT - VCC, Outputs Disabled Input Leakage Output Leakage Test Conditions VCC = Min., IOH = 4.0 mA VCC = Min., IOL = 8.0 mA Min. 2.4 -- 2.2 0.5 2 2 Max. -- 0.4 VCC + 0.5 0.8 2 2 Unit V V V V µA µA
6 7 8
Notes: 1. VIL (min.) = 3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE · VIH , f = 0 VCC = Max., CE · VCC 0.2V, VIN · VCC 0.2V, or VIN - 0.2V, f = 0 Com. Ind. Com. Ind. Com. Ind. -10 Min. Max. -- -- -- -- -- -- 300 -- 40 -- 5 -- -12 Min. Max. -- -- -- -- -- -- 270 300 40 45 5 10 -15 Min. Max. -- -- -- -- -- -- 250 270 40 45 5 10 -20 Min. Max. Unit -- -- -- -- -- -- 230 250 40 45 5 10 mA mA
9 10 11 12
ISB2
mA
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. B 04/17/01
3
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