Description: 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE<<<>>>The ISSI IS41LV16100B is 1,048,576 x 16-bit high-performance<<<>>>CMOS Dynamic Random Access Memories. These<<<>>>devices offer an accelerated cycle access called EDO<<<>>>Page Mode. EDO Page Mode allows 1,024 random accesses<<<>>>within a single row with access cycle time as short<<<>>>as 20 ns per 16-bit word.<<<>>>These features make the IS41LV16100B ideally suited for<<<>>>high-bandwidth graphics, digital signal processing, highperformance<<<>>>computing systems, and peripheral<<<>>>applications.<<<>>>The IS41LV16100B is packaged in a 42-pin 400-mil SOJ<<<>>>and 400-mil 50- (44-) pin TSOP (Type II).
