|
|
Part: IS-1845ASRH
Category:
Power Management
-> broadband power
Description: Single Event Radiation Hardened High Speed, Current Mode PWM
Company: Intersil Corporation
Datasheet: Download IS-1845ASRH datasheet File size : 180 kB
Request For quote: Find where to buy IS-1845ASRH
Datasheet text preview:
IS-1845ASRH
TM
Da ta S h eet
J ul y 2 0 0 1
Fi l e N u m b er
90 01. 2
Single Event Radiation Hardened High Speed, Current Mode PWM
The IS-1845ASR H is designed to be used in switching power supplies operating in current-mode. The rising edge of the on-chip oscillator turns on the output. Turn-off is controlled by the current sense comparator and occurs when the sensed current reaches a peak controlled by the error amplifier. The error amplifier output is the difference between the sampled voltage and VR EF.
TM
Features
· Electrically Screened to DSCC SM D # 5962-01509 · QM L Qualified per MIL-PRF-38535 Requirem ents · Radiation Environment - Total Dose . . . . . . . . . . . . . . . . . . . . . 300 krad(SI) (Max) - SEL Im mune . . . . . . . . . . . . . . . . . Dielectrically Isolated - SEU Immune . . . . . . . . . . . . . . . . . . . . 35M eV/mg/cm2 - SEU Cross-Section at 89MeV/m g/cm2 . . . . 5 x 10-6cm2 · Low Start-up Current . . . . . . . . . . . . . . . . . . . 100µA (Typ) · Fast Propagational Delay . . . . . . . . . . . . . . . . . 80ns (Typ) · Supply Voltage Range . . . . . . . . . . . . . . . . . . . 12V to 20V · High Output Drive . . . . . . . . . . . . . . . . . . . . 1A (Peak, Typ) · Under Voltage Lockout . . 8.8V Start (Typ), 8.2V Stop (Typ) · 2.5V Voltage Reference (VREF) · Switching Frequencies to 500kHz
Constructed with Intersil's Rad Hard Silicon G ate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are guaranteed and tested for 300krad(Si) total dose perform ance. Detailed Electrical Specifications for these devices are contained in SMD 5962-01509. A "hot-link" is provided on our homepage for dow nloading the SMD. www.intersil.com/spacedefense/spacenewprod.asp
Applications
· Current-Mode Switching Power Supplies · Control of High C urrent FET Drivers
Pinout
IS7-1845ASRH (CDIP2-T8 SBDIP) TOP VIEW
COMP V FB ISENSE RT CT 1 2 3 4 8 VREF 7 VCC 6 O UT 5 G ND
· M otor Speed and Direction Control
Ordering Information
ORDERING N UMBE R 5962F0150901VP C 5962F0150901QPC 5962F0150901VX C 5962F0150901QXC IS9-1845ASR H (FLATPACK) TOP VIEW
NC COMP VFB NC NC NC ISENSE RT CT NC 1 2 3 4 5 6 7 8 9 18 17 16 15 14 13 12 11 10 NC VREF VCC VC OUT NC GND OSCGND NC
INTERNAL MKT. NUMB ER IS7-1845AS RH-Q IS7-1845AS RH-8 IS9-1845AS RH-Q IS9-1845AS RH-8 IS1-1845AS RH/Proto IS9-1845AS RH/Proto
TEMP. RA NGE (oC) -5 0 t o 1 2 5 -5 0 t o 1 2 5 -5 0 t o 1 2 5 -5 0 t o 1 2 5 -5 0 t o 1 2 5 -5 0 t o 1 2 5
IS 7-1845A SRH/Proto IS 9-1845A SRH/Proto
NOTE: Grounding the Comp pin does not inhibit the output. The output may be inhibited by applying >1.2V to the ISENSE pin.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2001, All Rights Reserved | Star*PowerTM is a trademark of Intersil Corporation.
IS-1845ASRH Die Characteristics
DIE DIMENSIONS 3090µm x 4080µm (121.6 m ils x 159.0 mils) Thickness: 483µm ± 25.4µm (19 m ils ± 1 m il) INTERFACE M ATERIALS Glassivation Type: Phosphorus Silicon Glass (PSG) Thickness: 8.0kA ± 1.0kA Top M etallization Type: AlSiCu Thickness: 16.0kA ± 2kA Substrate Radiation Hardened Silicon Gate, Dielectric Isolation Backside Finish Silicon ASSEMBLY RELATED INFORMATION Substrate Potential Unbiased (DI) ADDITIONAL INFO RMATIO N Worst Case Current Density <2.0 x 105 A/cm 2 Transistor Count 582
Metallization Mask Layout
IS ENSE
IS-1845ASRH VFB
COM P
RTCT
OS CGND VR EF
GND GND
OUT VC VCC NOTES: 1. Both the GN D pads must be bonded to ground. 2. The OUT double- sized bond pad must be double bonded for current sharing purposes. 3. The OSCGND double-sized bond pad must be double bonded to ground for cur rent sharing purposes.
All Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation 7585 Irvine Center Drive Suite 100 Irvine, CA 92618 TEL: (949) 341-7000 FAX: (949) 341-7123 Intersil Corporation 2401 Palm Bay Rd. Palm Bay, FL 32905 TEL: (321) 724-7000 FAX: (32 1) 724-7946 EUROPE Intersil Europe Sarl Ave. C - F Ramuz 4 3 CH-1009 Pully Switzerland TE L: +41 21 7293637 FA X : +41 21 7293684 ASIA Intersil Corporation Unit 1804 18/F Guangdong Water Building 83 Austin Road TST, Kowloon Hong Kong TE L: +852 2723 6339 FA X : +852 2730 1433
2
Others parts begin by is
IS-1 IS-2 IS-3 IS-4 IS-5 IS-6 IS-7 IS-8 IS-9 IS-10 IS-11 IS-12 IS-13 IS-14 IS-15 IS-16 IS-17 IS-18 IS-19 IS-20 IS-21 IS-22 IS-23 IS-24 IS-25 IS-26 IS-27 IS-28 IS-29 IS-30 IS-31 IS-32 IS-33 IS-34 IS-35 IS-36 IS-37 IS-38 IS-39 IS-40 IS-41 IS-42 IS-43 IS-44 IS-45 IS-46 IS-47 IS-48 IS-49 IS-50 IS-51 IS-52 IS-53 IS-54 IS-55 IS-56 IS-57 IS-58 IS-59 IS-60 IS-61 IS-62
|
|
|
