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Part: EL2002
Category:
Description: Low Power, 180MHz Buffer Amplifier
Company: Intersil Corporation
Datasheet: Download EL2002 datasheet File size : 338 kB
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CT ENT ODU E PR PLACEM ter at ET E n OL OBS ENDED R pport Ce m/tsc MM l Su tersil.co ECO nica NO R t a ur Tech r www.in D a t o Sheet o c IL a cont -INTERS 1-888
EL2002
D e c em b e r 1995, Rev. D FN7021
Low Power, 180MHz Buffer Amplifier
The EL2002 is a low cost monolithic, high slew rate, buffer amplifier. Built using the Elantec monolithic Complementary Bipolar process, this patented buffer has a -3dB bandwidth of 180MHz, and delivers 100mA, yet draws only 5mA of supply current. It typically operates from ±15V power supplies but will work with as little as ±5V. This high speed buffer may be used in a wide variety of applications in military, video and medical systems. Typical examples include fast op-amp output current boosters, coaxial cable drivers and A/D converter input buffers. Elantec's products and facilities comply with MIL-I-45208A, and other applicable quality specifications. For information on Elantec's processing, see the Elantec document, QRA-1: Elantec's Processing, Monolithic Integrated Circuits.
Features
· 180MHz bandwidth · 2000V/µs slew rate · Low bias current, 3µA typical · 100mA output current · 5mA supply current · Shor t circuit protected · Low cost · Stable with capacitive loads · Wide supply range ±5V to ±15V · No thermal runaway
Applications
· Op amp output current booster · Cable/line driver · A/D input buffer · Isolation buffer
Ordering Information
PART NUMBER EL2002ACN EL2002CM EL2002CN TEMP. RANGE 0°C to +75°C 0°C to +75°C 0°C to +75°C P A CKAGE P -DIP 20-Pin SOL P -DIP PKG. NO. MDP0031 M DP0027 MDP0031
Pinouts
EL2002 (8-PIN DIP) TOP VIEW EL2002 (20-PIN SOL) TOP VIEW
Manufactured under U.S. Patent No. 4,833,424, 4,827,223 U.K. Patent No. 2217134
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2003. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc. All other trademarks mentioned are the property of their respective owners.
EL2002
Absolute Maximum Ratings (TA=25°C)
VS Supply Voltage (V+ - V-) . . . . . . . . . . . . . . . . . . . . ±18V or 36V VIN Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±15V or VS
If the input exceeds the ratings shown (or the supplies) or if the input to output voltage exceeds ±7.5V then the input current must be limited to ±50mA. See the applications section for more information.
Output Short Circuit Duration . . . . . . . . . . . . . . . . . . . . . Continuous
A heat sink is required to keep the junction temperature below the absolute maximum when the output is short circuited.
IIN Input Current (See above note) . . . . . . . . . . . . . . . . . . . ±50mA PD Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
The maximum power dissipation depends on package type, ambient temperature and heat sinking. See the characteristic curves for more details.
TA TJ TST
Operating Temperature Range . . . . . . . . . . . . . 0°C to +75°C Operating Junction Temperature. . . . . . . . . . . . . . . . . . 150°C Storage Temperature . . . . . . . . . . . . . . . . . .-65°C to +150°C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications
VS= ±15V, RS = 50, unless otherwise specified. TEST CONDITIONS LIMITS MIN -15 -20 -40 -50 -10 -15 -15 -20 1 0.1 0 .990 0 .9 8 5 0.85 0.83 0.83 0.80 ±10 ±9.5 8 13 15 +100 ±95 5 7 .5 10 60 50 2.8 1.5 75 +160 ± 11 0.91 0.93 0 .998 3 5 3 10 TYP 5 MAX +15 + 20 +40 + 50 +10 + 15 +15 + 20 mV mV mV mV µA µA µA µA M M V/V V/V V/V V/V V/V V/V V V mA mA mA mA dB dB ns ns UNITS
PARAMETER VOS
DESCRIPTION Offset Voltage
VI N 0
LOAD
TEMP 25°C TMIN, TMAX
100
0
25°C TMIN, TMAX
IIN
Input Current
0
25°C TMIN, TMAX
0
25°C TMIN, TMAX
RIN
Input Resistance
+ 12V
25°C TMIN, TMAX
AV1
Voltage Gain
±12V
1 0 0
25 °C TMIN, TMAX
AV2
Voltage Gain
±10V
25 °C TMIN, TMAX
AV3
Voltage Gain with VS = ±5V Output Voltage Swing
±3V
100
25 °C TMIN, TMAX
VO
± 12V
100
25 °C TMIN, TMAX
ROUT
Output Resistance
±2V
100
25°C TMIN, TMAX
IOUT
Output Current
±12V
(Note 1)
25 °C TMIN, TMAX
IS
Supply Current
0
100 100
25 °C TMIN, TMAX
PSRR
Supply Rejection (Note 2)
0
25°C TMIN, TMAX
tR tD
Rise Time Propagation Delay
0.5V 0. 5 V
25°C 25°C
2
EL2002
Electrical Specifications
PARAMETER SR NOTES: 1. Force the input to +12V and the output to +10V and measure the output current. Repeat with -12VIN and -10V on the output. 2. VOS is measured at VS+ = +4.5V, VS- = -4.5V and VS+ = +18V, VS- = 18V. Both supplies are changed simultaneously. 3. Slew rate is measured between VOUT = +5V and -5V. VS= ±15V, RS = 50, unless otherwise specified. (Continued) TEST CONDITIONS DESCRIPTION Slew Rate (Note 3) VI N ±10V LOAD 100 TEMP 25 °C MIN 1200 LIMITS TYP 2000 MAX V/µs UNITS
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EL2002 Typical Performance Curves
Offset Voltage vs Temperature Voltage Gain vs Temperature Output Voltage Swing vs Temperature
Supply Current vs Supply Voltage
Voltage Gain vs Input Voltage
Voltage Gain vs Source Resistance
Input Bias Current vs Input Voltage at Various Temperatures
Input Bias Current vs Input Voltage
±Slew Rate vs Supply Voltage
4
EL2002 Typical Performance Curves (Continued)
Slew Rate vs Load Capacitance Voltage Gain vs Frequency for Various Resistive Loads Voltage Gain vs Frequency for Various Capacitive Loads; RL = 100
Voltage Gain vs Frequency for Various Capacitive Loads; RL =
Phase Shift vs Frequency for Various Capacitive Loads
-3dB Bandwidth vs Supply Voltage
Power Supply Rejection Ratio vs Frequency
Output Impedance vs Frequency
Reverse Isolation vs Frequency
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