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Part: 112MT120KB

Category:

Description: 1200V 3 Phase Bridge in a Int-a-pak Package

Company: International Rectifier Corp.

Datasheet: Download 112MT120KB datasheet     File size : 2499 kB

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Datasheet text preview:
Bulletin I27503 08/97

MT..KB SERIES
THREE PHASE CONTROLLED BRIDGE Power Modules

Features
Package fully compatible with the industry standard INT-A-pak power modules series High thermal conductivity package, electrically insulated case Outstanding number of power encapsulated components Excellent power volume ratio 4000 VRMS isolating voltage UL E78996 approved

55 A 90 A 110 A

Description
A range of extremely compact, encapsulated three phase c o n t r o l l e d bridge rectifiers offering efficient and reliable o p e r a t i o n . They are intended for use in general purpose a n d heavy duty applications.

Major Ratings and Characteristics
Parameters
IO @ TC IFSM @ 50Hz @ 60Hz It
2

53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units 51MT.KB 91MT.KB 111MT.KB
55 85 390 410 770 700 7700 90 85 950 1000 4525 4130 45250 800 to 1600 - 40 to 125 - 40 to 125 110 85 1130 1180 6380 5830 63800 A °C A A A2s A2 s A2 s V °C °C

@ 50Hz @ 60Hz

I2 t VRRM range TSTG range TJ range

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1

53-93-113MT..KB Series
Bulletin I27503 08/97

ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VRRM, maximum repetitive peak reverse voltage V
800 1000 1200 1400 1600 800 1000 1200 1400 1600

VRSM, maximum non-repetitive peak reverse voltage V
900 1100 1300 1500 1700 900 1100 1300 1500 1700

VDRM, max. repetitive IRRM/IDRM max. peak off-state voltage gate open circuit V
800 1000 1200 1400 1600 800 1000 1200 1400 1600 20 10 @ TJ = 125°C

mA

80 100 53/52/51MT..KB 120 140 160 80 93/92/91MT..KB 113/112/111MT..KB 100 120 140 160

Forward Conduction
Parameter
IO ITSM Maximum DC output current @ Case temperature Maximum peak, one-cycle forward, non-repetitive on state surge current I2t Maximum I2t for fusing

53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB
55 85 390 410 330 345 770 700 540 500 90 85 950 1000 800 840 4525 4130 3200 2920 45250 1.09 1.27 4.10 3.59 1.65 150 200 mA 400 110 85 1130 1180 950 1000 6380 5830 4510 4120 63800 1.04 1.27 3.93 3.37 1.57 V A/µs m A 2s V A2 s A °C A t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% V RRM reapplied No voltage reapplied 100% V RRM reapplied Initial TJ = TJ max. 120° Rect conduction angle

I2 t

Maximum I2 t for fusing voltage

7700 1.17 1.45 12.40 11.04 2.68

t = 0.1 to 10ms, no voltage reapplied (16.7% x x IT(AV) x I T(AV)), @ T J max. (16.7% x x IT(AV) x I T(AV)), @ T J max. Ipk = 150A, TJ = 25°C tp = 400µs single junction TJ = 25oC, from 0.67 VDRM , ITM = x I T(AV), Ig = 500mA, tr 6 µs TJ = 25o C, anode supply = 6V, resistive load, gate open circuit TJ = 25oC, anode supply = 6V, resistive load

VT(TO)1 Low level value of threshold VT(TO)2 High level value of threshold voltage rt1 rt2 VTM di/dt IH IL Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Max. non-repetitive rate of rise of turned on current Max. holding current Max. latching current

2

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53-93-113MT..KB Series
Bulletin I27503 08/97

Blocking
Parameter
VINS RMS isolation voltage

53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB
4000 500 V V/µs TJ = 25 oC all terminal shorted f = 50Hz, t = 1s TJ = TJ max., linear to 0.67 VDRM, gate open circuit

dv/dt Max. critical rate of rise of off-state voltage (*)

(*) Available with dv/dt = 1000V/ms, to complete code add S90 i.e. 113MT160KBS90.

Triggering
Parameter
PG M Max. peak gate power

53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB
10 2.5 2.5 10 A V W T J = TJ max.

PG(AV) Max. average gate power IG M -VGT VGT Max. peak gate current Max. peak negative gate voltage Max. required DC gate voltage to trigger IGT Max. required DC gate current to trigger VGD IG D Max. gate voltage that will not trigger Max. gate current that will not trigger

4.0 2.5 1.7 270 150 80 0.25

V

T J = - 40°C T J = 25°C T J = 125°C T J = - 40°C Anode supply = 6V, resistive load

mA V

T J = 25°C T J = 125°C

Anode supply = 6V, resistive load

@ TJ = TJ max., rated VDRM applied

6

mA

Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case 0.18 1.07 0.19 1.17 RthCS Max. thermal resistance, case to heatsink T Mounting torque ± 10% wt to heatsink to terminal 4 to 6 3 to 4 225 g Nm 0.14 0.86 0.15 0.91 0.03 0.12 0.70 0.12 0.74 K/W K/W DC operation per module DC operation per junction 120° Rect condunction angle per module 120° Rect condunction angle per junction Per module Mounting surface smooth, flat an greased
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads.

53MT.KB 93MT.KB 113MT.KB 52MT.KB 92MT.KB 112MT.KB Units Conditions 51MT.KB 91MT.KB 111MT.KB
-40 to 125 °C

-40 to 125

°C

Approximate weight

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3

53-93-113MT..KB Series
Bulletin I27503 08/97

R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

Devices
53/52/51MT.KB 93/92/91MT.KB 113/112/111MT.KB

Sinusoidal conduction @ TJ max.
180o 0.072 0.033 0.027 120o 0.085 0.039 0.033 90o 0.108 0.051 0.042 60o 0.152 0.069 0.057 30o 0.233 0.099 0.081 180o 0.055 0.027 0.023

Rectangular conduction @ TJ max.
120o 0.091 0.044 0.037 90o 0.117 0.055 0.046 60o 0.157 0.071 0.059 30o 0.236 0.100 0.082

Units
K/W

Ordering Information Table
Device Code

11
1

3
2

MT
3

160
4

K

B
5

S90
6

1

-

Current rating code: 5 = 55 A (Avg) 9 = 90 A (Avg) 11 = 110 A (Avg)

2

-

Circuit configuration code: 3 = Full-controlled bridge 2 = Positive half-controlled bridge 1 = Negative half-controlled bridge

3 4 5 6

-

Essential part number Voltage code: Code x 10 = VRRM (See Voltage Ratings Table) Generation II Critical dv/dt: None = 500V/µs (Standard value) S90 = 1000V/µs (Special selection)

full-controlled bridge (53, 93, 113MT..KB)

positive half-controlled bridge (52, 92, 112MT..KB)

negative half-controlled bridge (51, 91, 111MT..KB)

NOTE: To order the Optional Hardware see Bulletin I27900
4 www.irf.com

53-93-113MT..KB Series
Bulletin I27503 08/97

Outline Table (with optional barriers)

All dimensions in millimeters (inches)

Outline Table (without optional barriers)

All dimensions in millimeters (inches)

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