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Part: IS64LV6416AL-20BA1
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 64Kx16
Company: Integrated Silicon Solution Inc.
Datasheet: Download IS64LV6416AL-20BA1 datasheet File size : 130 kB
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Datasheet text preview:
IS64LV6416AL
64K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI
®
PRELIMINARY INFORMATION APRIL 2003
FEATURES
· High-speed access time: 20 ns, 25ns · CMOS low power operation: 38 mW (typical) operating 10 µW (typical) standby · TTL compatible interface levels · Single power supply: 2.6V (-5%/+10%) (20ns) 2.5V (-5%/+10%) (25ns) · Fully static operation: no clock or refresh required · Three state outputs · Data control for upper and lower bytes · Automotive temperature available
DESCRIPTION The ISSI IS64LV6416AL is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is f a b r i c a t e d using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 20ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS64LV6416AL is packaged in the JEDEC standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16 MEMORY ARRAY
VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 04/03/03
1
I S 6 4 LV 6 4 1 6 A L
PIN CONFIGURATIONS 48-Pin mini BGA (6mm x 8mm)
1 2 3 4 5 6
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
ISSI
44-Pin TSOP
®
A B C D E F G H
LB I/O8 I/O9 GND VDD I/O14 I/O15 NC
OE UB I/O10 I/O11 I/O12 I/O13 NC A8
A0 A3 A5 NC NC A14 A12 A9
A1 A4 A6 A7 NC A15 A13 A10
A2 CE I/O1 I/O3 I/O4 I/O5 WE A11
NC I/O0 I/O2 VDD GND I/O6 I/O7 NC
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
PIN DESCRIPTIONS
A0-A15 I/O0-I/O15 CE OE WE LB UB NC VDD GND Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 04/03/03
I S 6 4 LV 6 4 1 6 A L
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN
ISSI
VDD Current ISB1, ISB2 ICC ICC
®
Write
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT VDD Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation VDD Related to GND Value 0.5 to VDD+0.5 65 to +150 1.5 -0.2 to +3.9 Unit V °C W V
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Option A1 A2 A3 Ambient Temperature 40°C to +85°C 40°C to +105°C 40°C to +125°C VDD (20ns) 2.6V -5%/+10% 2.6V -5%/+10% 2.6V -5%/+10% VDD (25ns) 2.5V -5%/+10% 2.5V -5%/+10% 2.5V -5%/+10%
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. 00B 04/03/03
3
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