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Part: IS61LV6416-12B
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 1M 64Kx16
Company: Integrated Silicon Solution Inc.
Datasheet: Download IS61LV6416-12B datasheet File size : 145 kB
Request For quote: Find where to buy IS61LV6416-12B
Datasheet text preview:
IS61LV6416 IS61LV6416L
64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
· High-speed access time: 8, 10, 12 ns · CMOS low power operation -- 61LV6416: 75 mW (typical) operating current 0.5 mW (typical) standby current -- 61LV6416L: 65 mW (typical) operating current 50 µW (typical) standby current · TTL compatible interface levels · Single 3.3V power supply · Fully static operation: no clock or refresh required · Three state outputs · Data control for upper and lower bytes · Industrial temperature available
ISSI
JUNE 2003
®
DESCRIPTION The ISSI IS61LV6416/IS61LV6416L is a high-speed,
1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV6416/IS61LV6416L is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP-II, and 48-pin mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
64K x 16 MEMORY ARRAY
VD D GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT
COLUMN I/O
CE OE WE UB LB CONTROL CIRCUIT
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc.
Rev. B 05/23/03
1
IS61LV6416 I S 6 1 LV 6 4 1 6 L
PIN CONFIGURATIONS 44-Pin SOJ (K) 44-Pin TSOP-II (T)
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
ISSI
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
®
A15 A14 A13 A12 A11 CE I/O0 I/O1 I/O2 I/O3 VDD GND I/O4 I/O5 I/O6 I/O7 WE A10 A9 A8 A7 NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A0 A1 A2 OE UB LB I/O15 I/O14 I/O13 I/O12 GND VDD I/O11 I/O10 I/O9 I/O8 NC A3 A4 A5 A6 NC
48-Pin mini BGA (6mm x 8mm) (B)
1 2 3 4 5 6
PIN DESCRIPTIONS
A0-A15 I/O0-I/O15 CE OE WE LB UB NC VDD GND Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground
A B C D E F G H
LB I/O8 I/O9 GND VDD I/O14 I/O15 NC
OE UB I/O10 I/O11 I/O12 I/O13 NC A8
A0 A3 A5 NC NC A14 A12 A9
A1 A4 A6 A7 NC A15 A13 A10
A2 CE I/O1 I/O3 I/O4 I/O5 WE A11
NC I/O0 I/O2 VDD GND I/O6 I/O7 NC
2
Integrated Silicon Solution, Inc.
Rev. B 05/23/03
IS61LV6416 I S 6 1 LV 6 4 1 6 L
TRUTH TABLE
Mode Not Selected Output Disabled Read WE X H X H H H L L L CE H L L L L L L L L OE X H X L L L X X X LB X X H L H L L H L UB X X H H L L H L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z High-Z High-Z DOUT DOUT High-Z DIN DIN
ISSI
VDD Current ISB1, ISB2 ICC ICC
®
1 2 3 4
Write
ICC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to VDD+0.5 65 to +150 1.5 20 Unit V °C W mA
5 6 7
VDD (12 ns) 3.3V ± 10% 3.3V ± 10%
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VDD (8,10 ns) 3.3V+10%,-5% 3.3V+10%,-5%
8 9 10
Max. -- 0.4 VDD + 0.3 0.8 2 2 Unit V V V V µA µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VI L I LI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage GND VIN VDD GND VOUT VDD, Outputs Disabled Test Conditions VDD = Min., IOH = 4.0 mA VDD = Min., IOL = 8.0 mA Min. 2.4 -- 2 0.3 2 2
11 12
Notes: 1. VIL (min.) = 2.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc.
Rev. B 05/23/03
3
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