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Part: IRMS/T6409
Category:
Description:
Company: Infineon Technologies Corporation
Datasheet: Download IRMS/T6409 datasheet File size : 52 kB
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IRMS6409 TOP VIEW IRMT6409
4 Mb/s Infrared Data Transceiver
0.222 (5.64)
0.058 (1.47)
0.410±.015 (10.42±.38)
0.170 (4.32)
0.035 (0.89)
0.035 (0.89)
IRMT6409
IRMS6409
0.486±.015 (12.35±.38)
IRMT6409
IRMS6409
FEATURES Compliant with IrDA Specification Data Rates 9.6 Kb/s to 4.0 Mb/s Wide Range of Supply Voltage 2.7 to 5.5 V Standby Current 3.3 mA at 5.0 V Typical Shut Down Current 0.01 A Typical Tri-State Receiver Output and TxD Disable AC Coupled Transmit Input Provides Integrated Protection for Eye Safety · High DC Ambient Rejection · Independent LED Supply, Anode Pin Can Take up to 9.0 V DC when not Transmitting and up to 4.0 V above CC when Transmitting · Receiver Latency Less than 100 s DESCRIPTION The IRMS6409 and IRMT6409 are the IRMS6400 and IRMT6400 with an integrated shield to provide extra EMI immunity. With state of the art submicron BiCMOS circuitry, coupled with Infineon optoelectronic expertise, the IRMS6409/IRMT6409 outperforms its closest rival. Infineon has incorporated a mode selection pin that toggles the device to operate in high rate (4.0 Mb/s) or low rate (9.6 Kb/s to 1.152 Mb/s) mode. Its external Shut Down (SD) feature cuts current consumption to typically 0.01 A. The transmit input is AC coupled, limiting transmit pulse duration to 70 s, preventing transmitter damage and continuous LED output. Mode select determines the data rate. Low for 9.6 Kb/s to 1.152 Mb/s, high for 4.0 Mb/s. · · · · · · ·
Absolute Maximum Ratings, A=25°C (except where noted) Supply Voltage Range, all states, CC .. 0.5 to +7.0 V LED Anode Voltage, not transmitting, LEDA....... 9.0 V LED Anode Voltage, transmitting, LEDA .......... 4.0 V + CC Input Currents, (pin 3 and 5) ..... 20 mA Output Sinking Current.... 50 mA Storage Temperature, S ....... 40 to +100°C Ambient Temperature, operating, A ......25 to +85°C Lead Solder Temperature, 230°C ........ <10 s IC Junction Temperature, J ...... 125°C Average IR LED Current, DC, ILED ......... 100 mA Repetitive Pulsed IR LED Current, <90 s, on <25%, ILED(RP) ... 700 mA Transmit Data Input Voltage, TxD ..........0.5 to VCC + 0.5 V Receive Data Output Voltage, VRxD ...... 0.5 to VCC + 0.5 V Table 1. Pin Functions
Pin no. 1 2 3 4 Function LED Anode LED Cathode TxD RxD Pin no. 5 6 7 8 Function SD/Mode VCC *Do not connect GND
*Pin 7 internally grounded
2000 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg, Germany www.osram-os.com · +49-941-202-7178
1
March 29, 2000-16
Figure 1. Block Diagram
Bandwidth Control Lowpass Filter Preamp Main AMP
+
VCC Tri-State CMOS Buffer
VCC VCC Pin 6 RxD Pin 4
Receive Detector
+
Detector Reference
Tri-state Control
Receiver Output
Ambient DC Cancelling
AGC
AGC & Signal Reference Processor TxD Feedback Blanking
Receive Ouput Blanking
Regulated Voltage & Current Sources High/Low Speed Flip/Flop
Power Down Control SD/Mode Pin 5 LED Anode Pin 1 LED Cathode Pin 2
Photodiode TxD Pin 3 TxD In GND Pin 8
TxD Input Buffer
Switched Current Source VCC
Transmit IR LED
Error AMP Pull-down
1X
144X
Output Ratioed Current Mirror
Electrical Characteristics Table 2. Basic Parameters, TA=25°C (except where noted)
Parameter Data Rate VCC Voltage Maximum LED Anode Voltage ICC Standby Current (Avg.) ICC Receiving Current (Avg.) ICC Shut Down Current (Note 1) (Avg.) ICC Transmitting Current (Avg.) Minimum VCC Min. 9.6 K 2.7 -- -- -- -- -- -- Typ. -- -- -- 3.3 3.8 0.01 6 2.5 Max. 4M 5.5 4.5 5.0 1.0 10 -- Unit bits/s V mA mA µA mA V Conditions Standard pulse width 0 to 70°C, VCC to VSS VCC=2.7 V to 5.0 V SD=0, VCC=2.7 V to 5.5 V, no receive signal 10 µW, 4.0 Mb/s, 15 pF load SD=VCC, VCC=2.7 V to 5.0 V TxD=VCC, VCC=5.0 V, VLED=5.0 V, RLED=5.1 Reduced performance
4 V+VCC V
Table 3. I/O Parameters
Parameter TxD, SD Input Capacitance TxD pull-down Minimum dV/dt of TxD Input Signal TxD Minimum Hold Time for Mode Change TxD Minimum Setup Time for Mode Change (Note 2) TxD Input Threshold SD Transmit Enable SD Input Threshold SD Input Threshold Min. -- 350 0.7 200 40 1.0 -- 1.0 0.6 Typ. 5.0 500 1.4 90 70 1.4 500 50 1.4 0.9 Max. -- 700 -- -- -- 1.8 -- 70 1.8 1.2 Unit pF k V/µs ns ns VCC ns ns V V Conditions VCC=2.7 V to 5.0 V TxD=VCC, VCC=5.0 V 5.0 V pulse VCC=2.7 V to 5.0 V, referenced to SD negative clocking edge VCC=2.7 V to 5.0 V, referenced to SD negative clocking edge VCC=2.7 V to 5.0 V, 125 ns input pulse VCC=2.7 V to 5.0 V, (Note 3) VCC=2.7 V to 5.0 V VCC=5.0 V VCC=2.7 V
SD to TxD input disable & RxD tri-state --
2000 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg, Germany www.osram-os.com · +49-941-202-7178
IRMS6409/IRMT6409
2
March 29, 2000-16
V
Table 3. I/O Parameters (continued)
Parameter RxD Output High RxD Output High RxD Output Low RxD Output Low RxD Output Low RxD Short Circuit RxD Short Circuit RxD to VCC Tri-State Impedance RxD Rise/Fall Time RxD Rise/Fall Time RxD Rise/Fall Time RxD Rise/Fall Time Min. 3.5 2.0 -- -- -- -- -- 350 -- -- -- -- Typ. 4.0 2.3 1.0 0.1 0.4 48 48 500 7.0 15 10 27 Max. -- -- 1.5 0.8 0.8 -- -- 650 -- -- -- -- Unit V V V V V mA mA k ns ns ns ns Conditions VCC=5.0 V, IOH=24 mA VCC=2.7 V, IOH=6.0 mA VCC=5.0 V, IOL=24 mA VCC=5.0 V, IOL<1 mA VCC=2.7 V, IOL=6.0 mA VCC=5.0 V, RxD=0, RxD=VCC VCC=2.7 V, RxD=0, RxD=VCC SD=VCC, VCC=5.0 V, measured between RxD to VCC VCC=5.0 V, load=15 pF VCC=5.0 V, load=100 pF VCC=2.7 V, load=15 pF VCC=2.7 V, load=100 pF
Table 4. Receiver Parameters, High Rate Mode (FIR), TA=25°C (except where noted)
Parameter Data Rate Logic High Input Irradiance Logic High Input Irradiance Minimum Detection Threshold Logic Low Input Irradiance Receive Latency (Near-far) Powerup Latency Transmit Latency (turn around) Pulse Width Correction Range Pulse Width Settling Symbol Min. -- EIHmin EIHmax EEmin EIL -- -- -- -- -- -- 10 -- -- -- -- -- -- 90 -- -- 110 -- -- 500 50 30 -- 8.0 10 125 50 25 Typ. 4M -- -- 4.0 Max. -- -- 500 -- 0.4 800 100 50 175 16 -- 140 -- -- Unit bit/s µW/cm
2
Conditions 125 ns (low rate pulse), 0 to 70°C Bit error rate=108
mW/cm2 In-band irradiance maximum µW/cm2 µW/cm µs µs µs ns µs ns ns mVP mVP
2
4.0 Mb/s Ambient interference pulsed 0 to 10 mW/cm2 ambient input 0 to 10 mW/cm2 ambient input 0 to 10 mW/cm2 ambient input 40 µW/cm2 input to produce 115 ns to 135 ns output, CC=2.7 V to 5.0 V 40 µW/cm2 input 125 ns, 40 µW/cm2 input, load=15 pf, measured at 1.4 V 125 ns, 40 µW/cm2 input, load=15 pf, measured at 1.4 V <0.1 pulse per second spurious output <0.1 pulse per second spurious output
Output Pulse Edge Jitter & Bias at RxD -- Output Pulse Width at RxD Power Supply Rejection 5.0 MHz -- -- --
Table 5. Receiver Parameters, Low Rate Mode (SIR/MIR), TA=25°C (except where noted)
Parameter Data Rate Logic High Input Irradiance (MIR) Logic High Input Irradiance (SIR) Logic High Input Irradiance Logic Low Input Irradiance Receive Latency (Near-far) Transmit Latency (turn around) Power-up Latency Power Supply Rejection 5.0 MHz Symbol Min. -- EIHmin EIHmin EIHmax EIL -- -- -- -- -- 9.6 K 10 4.0 -- -- -- -- -- -- -- Typ. -- -- -- -- -- 2.5 50 50 50 25 Max. 1.15 M -- -- 500 0.4 4.0 100 150 -- -- Unit bits/s µW/cm2 µW/cm2 µW/cm2 ms µs µs mVP mVP Conditions 9.6 Kb/s to 115 Kb/s=1.63 µs, 576 Kb/s=434 ns, 1.152 Mb/s=217 ns Bit error rate=108 Bit error rate=108
mW/cm2 In band irradiance maximum Ambient interference pulsed 0 to 10 mW/cm2 ambient input 0 to 10 mW/cm2 ambient input 0 to 10 mW/cm2 ambient input <0.1 pulse per second spurious output <0.1 pulse per second spurious output
IRMS6409/IRMT6409
2000 Infineon Technologies Corp. · Optoelectronics Division · San Jose, CA www.infineon.com/opto · 1-888-Infineon (1-888-463-4636) OSRAM Opto Semiconductors GmbH & Co. OHG · Regensburg, Germany www.osram-os.com · +49-941-202-7178
3
March 29, 2000-16
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