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Part: HYM322160GS-70
Category:
Memory
-> DRAM
-> EDO/FPM DRAM
-> Modules
-> 8 MB
-> FPM
Description: 2M X 32bit DRAM Module
Company: Infineon Technologies Corporation
Datasheet: Download HYM322160GS-70 datasheet File size : 904 kB
Request For quote: Find where to buy HYM322160GS-70
Datasheet text preview:
2M x 32-Bit Dynamic RAM Module
HYM 322160S/GS-60/-70
Advanced Information
· ·
2 097 152 words by 32-Bit organization (alternative 4 194 304 words by 16-Bit) Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 4840 mW active (-60 version) max. 4400 mW active (-70 version) CMOS 88 mW standby TTL 176 mW standby CAS-before-RAS refresh R A S - only- refr e s h Hidden-refresh 8 decoupling capacitors mounted on substrate All inputs, outputs and clocks fully TTL compatible 72 pin double-sided Single in-Line Memory Module with 25.4 mm (1000 mil) height Utilizes sixteen 1M × 4 DRAMs in 300 mil SOJ packages 1024 refresh cycles / 16 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pads (S- version) Gold contact pads (GS - version)
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Semiconductor Group
1
9.94
HYM 322160S/GS-60/-70 2M x 32-Bit
The HYM322160S/GS-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32Bit in a 72-pin single-in-line package comprising sixteen HYB514400BJ 1M × 4 DRAMs in 300 mil wide SOJ-packages mounted together with eight 0.2 µF ceramic decoupling capacitors on a PC board. The HYM322160S/GS-60/-70 can also be used as a 4 194 304 words by 16-Bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, ..., DQ15 and DQ31, respectively. Each HYB514400BJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322160S/GS-60/-70 dictates the use of early write cycles. Ordering Information Type HYM 322160S-60 HYM 322160S-70 HYM 322160GS-60 HYM 322160GS-70 Ordering Code Q67100-Q2014 Q67100-Q2015 Q67100-Q2016 Q67100-Q2017 P a c k a ge L-SIM-72-11 L-SIM-72-11 L-SIM-72-11 L-SIM-72-11 Description DRAM Module (access time 60 ns) DRAM Module (access time 70 ns) DRAM Module (access time 60 ns) DRAM Module (access time 70 ns)
Semiconductor Group
2
HYM 322160S/GS-60/-70 2M x 32-Bit
Pin Configuration
Pin Names
VSS 1 DQ0 2 DQ16 3 DQ1 4 DQ17 5 DQ2 6 DQ18 7 DQ3 8 DQ19 9 VCC 10 N.C. 11 A0 12 A1 13 A2 14 A3 15 A4 16 A5 17 A6 18 N.C. 19 DQ4 20 DQ20 21 DQ5 22 DQ21 23 DQ6 24 DQ22 25 DQ7 26 DQ23 27 A7 28 N.C. 29 VCC 30 A8 31 A9 32 RAS3 33 RAS2 34 N.C. 35 N.C. 36 N.C. 37 VSS 39 CAS2 41 CAS1 43 RAS1 45 47 WE DQ8 49 DQ9 51 DQ10 53 DQ11 55 DQ12 57 VCC 59 DQ13 61 DQ14 63 DQ15 65 PD0 67 PD2 69 N.C. 71 N.C. 38 CAS0 40 CAS3 42 RAS0 44 N.C. 46 N.C. 48 DQ24 50 DQ25 52 DQ26 54 DQ27 56 DQ28 58 DQ29 60 DQ30 62 DQ31 64 N.C. 66 PD1 68 PD3 70 VSS 72
A0-A9 DQ0- D Q 31 CAS0 - CAS3 RAS0 - RAS3 WE
Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/W rite Input Power (+ 5 V) Ground Presence Detect Pin No Connection
VCC VSS
PD N.C.
Presence Detect Pins - 60 PD0 PD1 PD2 PD3 N.C. N.C. N .C . N.C. -70 N.C. N.C.
VSS
N.C.
Semiconductor Group
3
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