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Part: HYM322140GS-60
Category:
Description: 2M X 32 Bit DRAM Module
Company: Infineon Technologies Corporation
Datasheet: Download HYM322140GS-60 datasheet File size : 904 kB
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Datasheet text preview:
2M × 32-Bit Dynamic RAM Module (4M × 16-Bit Dynamic RAM Module)
HYM 322000S/GS-50/-60
Advanced Information
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2 097 152 words by 32-bit organization (alternative 4 194 304 words by 16-bit) Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 5 V (± 10 %) supply Low power dissipation max. 2200 mW active (-50 version) max. 1980 mW active (-60 version) CMOS 22 mW standby T TL 44 mW standby CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh 4 decoupling capacitors mounted on substrate All inputs, outputs and clock fully TTL compatible 72 pin Single in-Line Memory Module Utilizes four 1M × 16 -DRAMs in SOJ-42 packages 1024 refresh cycles / 16 ms Optimized for use in byte-write non-parity applications Tin-Lead contact pads HYM 322000S Gold-Lead contact pads HYM 322000GS single sided module with 20.32 mm (800 mil) height
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Semiconductor Group
1
1 2 . 95
HYM 322000S/GS-50/-60 2M × 32-Bit
The HYM 322000S/GS-50/-60 is a 8 MByte DRAM module organized as 2 097 152 words by 32bit in a 72-pin single-in-line package comprising four HYB 5118160BSJ 1M × 16 DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC board. The HYM 322000S/GS-60 can also be used as a 4 194 304 words by 16-bits dynamic RAM module by means of connecting DQ0 and DQ16, DQ1 and DQ17, DQ2 and DQ18, ..., DQ15 and DQ31, r espectiv ely. Each HYB 5118160BSJ is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322000S/GS-50/-60/-70 dictates the use of early write cycles. Ordering Information Type HYM 322000S-50 HYM 322000S-60 HYM 322000GS-50 HYM 322000GS-60 Ordering Code Q67100 - Q2052 Q67100 - Q2057 Q67100 - Q2054 Q67100 - Q2059 Package L-SIM-72-10 L-SIM-72-10 L-SIM-72-10 L-SIM-72-10 Descriptions DRAM module (access time 50 ns) DRAM module (access time 60 ns) DRAM module (access time 50 ns) DRAM module (access time 60 ns)
Semiconductor Group
2
HYM 322000S/GS-50/-60 2M × 32-Bit
Pin Names
VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 N.C. DQ20 DQ21 DQ22 DQ23 N.C. A8 RAS3 N.C. 1 DQ0 2 3 DQ1 4 5 DQ2 6 7 DQ3 8 9 VCC 10 11 A0 12 13 A2 14 15 A4 16 17 A6 18 19 DQ4 20 21 DQ5 22 23 DQ6 24 25 DQ7 26 27 A7 28 29 VCC 30 31 A9 32 33 RAS2 34 35 N.C. 36
A0-A9 DQ0-DQ31 CAS0 - CAS3 RAS0 - RAS3 WE
Address Inputs Data Input/Output Column Address Strobe Row Address Strobe Read/Write Input Power (+ 5 V) Ground Presence Detect Pin No Connection
VCC VSS
PD N.C.
N.C. VSS CAS2 CAS1 RAS1 WE DQ8 DQ9 DQ10 DQ11 DQ12 VCC DQ13 DQ14 DQ15 PD0 PD2 N.C.
37 39 41 43 45 47 49 51 53 55 57 59 61 63 65 67 69 71
N.C. 38 CAS0 40 CAS3 42 RAS0 44 N.C. 46 N.C. 48 DQ24 50 DQ25 52 DQ26 54 DQ27 56 DQ28 58 DQ29 60 DQ30 62 DQ31 64 N.C. 66 PD1 68 PD3 70 VSS 72
Presence Detect Pins - 50 PD0 PD1 PD2 PD3 N.C. N.C. -60 N.C. N.C N.C. N.C.
VSS VSS
Pin Configuration
Semiconductor Group
3
Others parts begin by hy
HY-1 HY-2 HY-3 HY-4 HY-5 HY-6 HY-7 HY-8 HY-9 HY-10 HY-11 HY-12 HY-13 HY-14 HY-15 HY-16 HY-17 HY-18 HY-19 HY-20 HY-21 HY-22 HY-23 HY-24 HY-25 HY-26 HY-27 HY-28 HY-29 HY-30 HY-31 HY-32 HY-33 HY-34
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