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Part: IS62LV1024LL-70BI
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 70ns; 2.7-3.6V; 128K X 8 Low Power And Low VCC CMOS Static RAM
Company: Integrated Circuit Solution
Datasheet: Download IS62LV1024LL-70BI datasheet File size : 104 kB
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Datasheet text preview:
IS62L210V1/024L S6 V L24L LL I IS62LV1024LL
128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM
.EATURES
Access times of 45, 55, and 70 ns Low active power: 60 mW (typical) Low standby power: 15 µW (typical) CMOS standby Low data retention voltage: 2V (min.) Available in Low Power (-L) and Ultra Low Power (-LL) Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications TTL compatible inputs and outputs Single 2.7V to 3.6V power supply
DESCRIPTION The 1+51 IS62LV1024L and IS62LV1024LL are low power
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They are fabricated using 1+51's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62LV1024L and IS62LV1024LL are available in 32-pin 8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin 6*8mm T.-BGA.
.UNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE CONTROL CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
1
IS62LV1024L/LL
PIN CON.IGURATION
32-Pin SOP
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
PIN CON.IGURATION
32-Pin 8x20mm TSOP-1 and 8x13.4mm TSOP-1
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
48-Pin 6x8mm T.-BGA
PIN DESCRIPTIONS
A0-A16 Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output No Connection Power Ground CE1 CE2 OE WE I/O0-I/O7 NC Vcc GND
1 A B C D E F G H
A0 I/O5 I/O6 GND Vcc I/O7 I/O8 A9
2
A1 A2
3
CE2 WE NC
4
A3 A4 A5
5
A6 A7
6
A8 I/O1 I/O2 Vcc GND
NC OE A10 CE1 A11
NC A16 A12 A15 A13
I/O3 I/O4 A14
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VC C 2.7V to 3.6V 2.7V to 3.6V
2
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
IS62LV1024L/LL
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB, ISB ISB, ISB IC C IC C IC C
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM VCC TBIAS TSTG PT Parameter Terminal Voltage with Respect to GND Vcc related to GND Temperature Under Bias Storage Temperature Power Dissipation Value 0.5 to Vcc + 0.5 0.3 to +4.6 40 to +85 65 to +150 0.7 Unit V V °C °C W
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
C A P A C I T A N C E( 1 , 2 )
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit p. p.
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions VCC = Min., IOH = 1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.2 2.2 0.3 1 1 Max. 0.4 VCC + 0.3 0.4 1 1 Unit V V V V µA µA
GND VIN VCC GND VOUT VCC
Notes: 1. VIL = 3.0V for pulse width less than 10 ns.
Integrated Circuit Solution Inc.
LPSR018-0D 07/06/2001
3
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