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Part: IS62C1024-70TI
Category:
Memory
-> SRAM
-> Async. SRAM
Description: 70ns; 5V; 128K X 8 High-speed CMOS Static RAM
Company: Integrated Circuit Solution
Datasheet: Download IS62C1024-70TI datasheet File size : 105 kB
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Datasheet text preview:
IS62C1024
IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
· High-speed access time: 35, 45, 55, 70 ns · Low active power: 450 mW (typical) · Low standby power: 500 µW (typical) CMOS standby · Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications · Fully static operation: no clock or refresh required · TTL compatible inputs and outputs · Single 5V (±10%) power supply
DESCRIPTION The ICSI IS62C1024 is a low power,131,072-word by 8-bit C M O S static RAM. It is fabricated using ICSI's highperformance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024 is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 x 2048 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE CONTROL CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
SR016-0B
1
IS62C1024
PIN CONFIGURATION
32-Pin SOP and DIP
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
PIN CONFIGURATION
32-Pin 8x20mm TSOP-1
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
PIN DESCRIPTIONS
A0-A16 CE1 CE2 OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0°C to +70°C 40°C to +85°C VCC 5V ± 10% 5V ± 10%
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
2
Integrated Circuit Solution Inc.
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM T BIAS T STG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value 0.5 to +7.0 10 to +85 65 to +150 1.5 20 Unit V °C °C W mA
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE ( 1 , 2 )
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH = 1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.4 -- 2.2 0.3 5 10 5 10 Max. -- 0.4 VCC + 0.5 0.8 5 10 5 10 Unit V V V V µA µA
GND VIN VCC GND VOUT VCC
Com. Ind. Com. Ind.
Notes: 1. VIL = 3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. -35 ns Min. Max. -- -- -- -- -- -- 150 160 40 60 30 40 -45 ns Min. Max. -- -- -- -- -- -- 135 145 40 60 30 40 -55 ns Min. Max. -- -- -- -- -- -- 120 130 40 60 30 40 -70 ns Min. Max. -- -- -- -- -- -- 90 100 40 60 30 40 Unit mA mA
VCC = Max., Com. VIN = VIH or VIL, CE1 VIH, Ind. or CE2 VIL, f = 0 VCC = Max., Com. CE1 VCC 0.2V, Ind. CE2 0.2V, VIN > VCC 0.2V, or VIN 0.2V, f = 0
ISB2
mA
Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc.
SR016-0B
3
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