|
|
Part: HY62V8100BLLG
Category:
Memory
-> SRAM
-> Low Power
-> 1 Mb
Description:
Company: Hynix Semiconductor
Datasheet: Download HY62V8100BLLG datasheet File size : 504 kB
Request For quote: Find where to buy HY62V8100BLLG
Datasheet text preview:
HY62V8100B Series
128Kx8bit CMOS SRAM
Document Title
128K x8 bit 3.3V Low Power CMOS slow SRAM
Revision History
Revision No 10 11 History Initial Revision History Insert Change the Notch Location of sTSOP - Left-Top => Left-Center Marking Information Add Revised - AC Test Condition Add : 5pF Test Load Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jul.14.2000 Sep.04.2000 Remark Final Final
12
Dec.04.2000
Final
13
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 13 / Apr. 2001 Hynix Semiconductor
HY62V8100B Series
DESCRIPTION
The HY62V8100B is a high speed, low power and 1M bit CMOS SRAM organized as 131,072 words by 8bit. The HY62V8100B uses high performance CMOS process technology and designed for high speed low power circuit technology. It is particulary well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 2.0V.
FEATURES
· Fully static operation and Tri-state output · TTL compatible inputs and outputs · Battery backup(LL-part) -. 2.0V(min) data retention · Standard pin configuration -. 32 SOP - 525mil -. 32 TSOP-I - 8X20(Standard and Reversed) -. 32 sTSOP-I - 8X13.4 (Standard and Reversed)
Product No. HY62V8100B HY62V8100B-E HY62V8100B-I
Voltage (V) 3.0~3.6 3.0~3.6 3.0~3.6
Speed (ns) 70/85/100 70/85/100 70/85/100
Operation Current/Icc(mA) 5 5 5
Standby Current(uA) LL 10 15 15
Temperature (°C) 0~70 -25~85(E) -40~85(I)
Note 1. Blank : Commercial, E : Extended, I : Industrial 2. Current value is max.
PIN CONNECTION
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Vcc A15 CS2 /WE A13 A8 A9 A11 /OE A10 /CS1 I/O8 I/O7 I/O6 I/O5 I/O4
A11 A9 A8 A13 /WE CS2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
/OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3
A11 A9 A8 A13 /WE CS2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
/OE A10 /CS1 DQ8 DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1 A0 A1 A2 A3
SOP
TSOP-I (Standard)
sTSOP-I (Standard)
PIN DESCRIPTION
Pin Name /CS1 CS2 /WE /OE A0 ~ A16 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select 1 Chip Select 2 Write Enable Output Enable Address Inputs Data Inputs / Outputs Power(3.0V~3.6V) Ground
A0
BLOCK DIAGRAM
ROW DECODER SENSE AMP I/O1
ADD INPUT BUFFER
DATA I/O BUFFER
COLUMN DECODER
MEMORY ARRAY 128K x 8
WRITE DRIVER
A16
I/O8
/CS1 COLUMN DECODER CS2 /OE /WE
Rev 13 / Apr. 2001
2
HY62V8100B Series
ORDERING INFORMATION
Part No. HY62V8100BLLG HY62V8100BLLT1 HY62V8100BLLR1 HY62V8100BLLST HY62V8100BLLSR HY62V8100BLLG-E HY62V8100BLLT1-E HY62V8100BLLR1-E HY62V8100BLLST-E HY62V8100BLLSR-E HY62V8100BLLG-I HY62V8100BLLT1-I HY62V8100BLLR1-I HY62V8100BLLST-I HY62V8100BLLSR-I Speed 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 70/85/100 Power LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part Temp. Package SOP TSOP-I(Standard) TSOP-I(Reversed) smaller TSOP-I(Standard) smaller TSOP-I(Reversed) SOP TSOP-I(Standard) TSOP-I(Reversed) smaller TSOP-I(Standard) smaller TSOP-I(Reversed) SOP TSOP-I(Standard) TSOP-I(Reversed) smaller TSOP-I(Standard) smaller TSOP-I(Reversed)
E E E E E I I I I I
Note 1. Blank : Commercial, E : Extended, I : Industrial
ABSOLUTE MAXIMUM RATING (1)
Symbol Vcc, VIN, VOUT TA Parameter Power Supply, Input/Output Voltage Operating Temperature Rating -0.3 to 4.6 0 to 70 -25 to 85 -40 to 85 -65 to 125 1.0 50 260 · 10 Unit V °C °C °C °C W mA °C·sec Remark HY62V8100B HY62V8100B-E HY62V8100B-I
TSTG PD IOUT TSOLDER
Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time
Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 H X L L L CS2 X L H H H /WE X X H H L /OE X X H L X Mode Deselected Deselected Output Disabled Read Write I/O High-Z High-Z High-Z Data Out Data In Power Standby Standby Active Active Active
Note : 1. H=VIH, L=VIL, X=don't care( VIH or VIL )
Rev 13 / Apr. 2001
2
Others parts begin by hy
HY-1 HY-2 HY-3 HY-4 HY-5 HY-6 HY-7 HY-8 HY-9 HY-10 HY-11 HY-12 HY-13 HY-14 HY-15 HY-16 HY-17 HY-18 HY-19 HY-20 HY-21 HY-22 HY-23 HY-24 HY-25 HY-26 HY-27 HY-28 HY-29 HY-30 HY-31 HY-32 HY-33 HY-34
|
|
|
