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Part: HY62SF16806B-SFI
Category:
Memory
-> SRAM
-> Low Power
-> 8 Mb
-> Super Low Power Slow SRAM
Description:
Company: Hynix Semiconductor
Datasheet: Download HY62SF16806B-SFI datasheet File size : 504 kB
Request For quote: Find where to buy HY62SF16806B-SFI
Datasheet text preview:
HY62SF16806B Series
512Kx16bit full CMOS SRAM
Document Title
512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
Revision History
Revision No 00 01 History Initial Release Draft Date May.29.2001 Remark Preliminary Final
DC Electrical Characteristics Oct.22.2002 - ICC changed 4mA -> 3mA - ICC1 changed 25mA at 70ns -> 15mA at 70ns - ICC1 changed 3mA at 1us -> 2mA at 1us - ISB (TTL) changed 50uA -> 300uA AC Test Loads - (R1//R2) 4091Ohm // 3273Ohm -> 3070Ohm // 3150Ohm AC Test Conditions - Output Load changed 5pF -> 30pF - Input Pulse Level 0.4V to 1.6V -> 0.2V to Vcc-0.2 Data Retention Electric Characteristic - ICCDR LL-Part changed 20uA -> 10uA
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 /Oct. 2002 Hynix Semiconductor
HY62SF16806B
DESCRIPTION
The HY62SF16806B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62SF16806B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly wellsuited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
· Fully static operation and Tri-state output · TTL compatible inputs and outputs · Battery backup(LL/SL-part) - 1.2V(min) data retention · Standard pin configuration - 48-FBGA
FEATURES
Product Voltage Speed No. (V) (ns) HY62SF16806B-C 1.65~2.3 70/85/100 HY62SF16806B-I 1.65~2.3 70/85/100 Note 1. C : Commercial, I : Industrial 2. Current value is max. Operation Current/Icc(mA) 3 3 Standby Current(uA) LL SL 15 8 15 8 Temperature (°C) 0~70 -40~85
PIN CONNECTION ( Top View )
1 2 /OE /UB 3 A0 A3 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 /CS1 IO2 IO4 IO5 IO6 6 CS2 IO1
ADD INPUT BUFFER
BLOCK DIAGRAM
ROW DECODER SENSE AMP
A B C D E F G H
/LB IO9
I/O1
COLUMN DECODER
I/O8 DATA I/O BUFFER
PRE DECODER
IO10 IO11 A5 Vss Vcc IO12 A17 IO13 Vss
IO3 Vcc Vss IO7
A18
MEMORY ARRAY 512K x 16
WRITE DRIVER
I/O9
BLOCK DECODER
IO15 IO14 A14 IO16 NC A1 A8 A12 A9
I/O16
/WE IO8 A11 NC
/CS1 CS2 /OE /LB /UB /WE
PIN DESCRIPTION
Pin Name /CS1, CS2 /WE /OE /LB /UB Pin Function Chip Select Write Enable Output Enable Lower Byte Control(I/O1~I/O8) Upper Byte Control(I/O9~I/O16) Pin Name I/O1~I/O16 A0~A18 Vcc Vss NC Pin Function Data Inputs / Outputs Address Inputs Power(1.65V~2.3V) Ground No Connection
Rev.01 /Oct. 2002
2
HY62SF16806B
ORDERING INFORMATION
Part No. Speed HY62SF16806B-DFC 70/85/100 HY62SF16806B-SFC 70/85/100 HY62SF16806B-DFI 70/85/100 HY62SF16806B-SFI 70/85/100 Note 1. C : Commercial, I : Industrial Power LL-part SL-part LL-part SL-part Package FBGA FBGA FBGA FBGA Temp. C C I I
ABSOLUTE MAXIMUM RATINGS (1)
Symbol VIN, VOUT Vcc TA TSTG PD TSOLDER Parameter Input/Output Voltage Power Supply Operating Temperature Storage Temperature Power Dissipation Ball Soldering Temperature & Time Rating -0.3 to Vcc+0.3 -0.3 to 2.6 0 to 70 -40 to 85 -55 to 150 1.0 260 · 10 Unit V V °C °C °C W °C · sec Remark
HY62SF16806B-C HY62SF16806B-I
Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 H X X L L L CS2 X L X H H H /WE X X X H H H /OE X X X H H L /LB X X H L X L H L L H L /UB X X H X L H L L H L L
Mode
Deselected Output Disabled Read
L
H
L
X
Write
I/O Pin I/O1~I/O8 I/O9~I/O16 Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z Hi-Z DOUT Hi-Z Hi-Z DOUT DOUT DOUT DIN Hi-Z Hi-Z DIN DIN DIN
Power Standby Active Active
Active
Note: 1. H=VIH, L=VIL, X=don't care(VIH or VIL) 2. UB, LB(Upper, Lower Byte enable) These active LOW inputs allow individual bytes to be written or read. When LB is LOW, data is written or read to the lower byte, I/O1 -I/O8. When UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
Rev.01 /Oct. 2002
2
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