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Part: HY62KT08081E-85I
Category:
Memory
-> SRAM
-> 256 Kb
Description: 32Kx8bit CMOS SRAM
Company: Hynix Semiconductor
Datasheet: Download HY62KT08081E-85I datasheet File size : 504 kB
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Datasheet text preview:
HY62K(U,V)T08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM
Revision History
Revision No 00 History Initial Merged 3.0V/3.3V SPEC Revised - Marking Information Change : SOP Type - Voh Limit Change : 2.4V => 2.2V @2.7~3.6V Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Jan.20.2000 Remark Final
01
Feb.21.2001
Final
02
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 02 / Apr. 2001 Hynix Semiconductor
HY62K(U,V)T08081E Series
DESCRIPTION
The HY62K(U,V)T08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
FEATURES
· · · · · Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min.) data retention Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL-Part 5 8 8 5 8 8 5 8 8 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended) 0~70(Normal) -25~85(Extended) -40~85(Extended)
Product Voltage Speed No. (V) (ns) HY62KT08081E-C 2.7~3.6 70*/85/100 HY62KT08081E-E HY62KT08081E-I HY62VT08081E-C 70/85/100 3.0~3.6 HY62VT08081E-E HY62VT08081E-I HY62UT08081E-C 2.7~3.3 70*/85/100 HY62UT08081E-E HY62UT08081E-I Note *. Measured at 30pF test load.
Operation Current(mA) 2
2
2
PIN CONNECTION
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
/OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name /CS /WE /OE A0 ~ A14 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground
A0
BLOCK DIAGRAM
SENSE AMP ROW DECODER ADD INPUT BUFFER I/O1 OUTPUT BUFFER I/O8
COLUMN DECODER
A14 /CS /OE /WE
Rev 02 / Apr. 2001
CONTROL LOGIC
WRITE DRIVER
MEMORY ARRAY 512x512
2
HY62K(U,V)T08081E Series
ORDERING INFORMATION
Part No. Vcc HY62KT08081E-DPC HY62KT08081E-DPE HY62KT08081E-DPI HY62KT08081E-DGC HY62KT08081E-DGE 2.7~3.6V HY62KT08081E-DGI HY62KT08081E-DTC HY62KT08081E-DTE HY62KT08081E-DTI HY62VT08081E-DPC HY62VT08081E-DPE HY62VT08081E-DPI HY62VT08081E-DGC 3.0~3.6V HY62VT08081E-DGE HY62VT08081E-DGI HY62VT08081E-DTC HY62VT08081E-DTE HY62VT08081E-DTI HY62UT08081E-DPC HY62UT08081E-DPE HY62UT08081E-DPI HY62UT08081E-DGC HY62UT08081E-DGE 2.7~3.3V HY62UT08081E-DGI HY62UT08081E-DTC HY62UT08081E-DTE HY62UT08081E-DTI Note *. Measured at 30pF test load. Speed Power Temp 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C Package PDIP
70*/85/100ns
LL-part
SOP
TSOP-I Standard
PDIP
70/85/100ns
LL-part
SOP
TSOP-I Standard
PDIP
70*/85/100ns
LL-part
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol Vcc, VIN, VOUT TA Parameter Power Supply, Input/Output Voltage Operating Temperature HY62K(U,V)T08081E-C HY62K(U,V)T08081E-E HY62K(U,V)T08081E-I Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time Rating -0.3 to 4.6 0 to 70 -25 to 85 -40 to 85 -65 to 150 1.0 50 260 ·10 Unit V °C °C °C °C W mA °C·sec
TSTG PD IOUT TSOLDER Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev 02 / Apr. 2001
2
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