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Part: HY62KF16403E-I
Category:
Memory
-> SRAM
-> Low Power
-> 4 Mb
-> Super Low Power Slow SRAM
Description:
Company: Hynix Semiconductor
Datasheet: Download HY62KF16403E-I datasheet File size : 504 kB
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Datasheet text preview:
HY62KF16403E Series
256Kx16bit full CMOS SRAM
Document Title
256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Revision History
Revision No 00 01 History Initial Draft Draft Date Dec.26.2001 Remark Preliminary Final
Absolute Maximum Ratings Nov.14.2002 - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V DC Electric Characteristics - ICC changed 4mA -> 3mA - ICC1 changed 25mA at 55ns -> 20mA at 55ns - ICC1 changed 20mA at 70ns -> 15mA at 70ns - ICC1 changed 3mA at 1us -> 2mA at 1us AC Test Conditions - Output Load changed 5pF -> 30pF Data Retention Electric Characteristics - ICCDR changed 10uA -> 6uA Marking Information - Part Name changed HY62KF6403E ->HY62KF16403E
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Nov.02 Hynix Semiconductor
HY62KF16403E Series
DESCRIPTION
The HY62KF16403E is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62KF16403E uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
FEATURES
· Fully static operation and Tri-state output · TTL compatible inputs and outputs · Battery backup -. 1.2V(min) data retention · Standard pin configuration -. 44pin 400mil TSOP-II (Forward)
Product No. HY62KF16403E-I
Voltage (V) 2.7~3.6
Speed (ns) 55/70
Operation Current/Icc(mA) 3
Standby Current(uA) SL LL 6 15
Temperature (°C) -40~85
Note 1. I : Industrial 2. Current value is max.
PIN CONNECTION
A0
BLOCK DIAGRAM
ROW DECODER I/O1
A4 A3 A2 A1 A0 / CS I/O1 I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 / WE A17 A16 A15 A14 A13
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
A5 A6 A7 / OE / UB / LB I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 NC A8 A9 A10 A11 A12
SENSE AMP
COLUMN DECODER
I/O8 DATA I/O BUFFER
ADD INPUT BUFFER
PRE DECODER
MEMORY ARRAY 256K x 16
WRITE DRIVER
I/O9
BLOCK DECODER
I/O16
A17
/CS /OE /LB /UB /WE
TSOPII (Forward)
PIN DESCRIPTION
Pin Name /CS /WE /OE /LB /UB Pin Function Chip Select Write Enable Output Enable Lower Byte Control (I/O1~I/O8) Upper Byte Control (I/O9~I/O16) Pin Name I/O1~I/O16 A0~A17 Vcc Vss NC Pin Function Data Inputs/Outputs Address Inputs Power (2.7~3.6V) Ground No Connection
Rev.01 / Nov.02
2
HY62KF16403E Series
ORDERING INFORMATION
Part No. HY62KF16403E-SD(I) HY62KF16403E-DD(I) Note 1. I : Industrial Speed 55/70 55/70 Power SL-part LL-part Temp. I I Package TSOP-II TSOP-II
ABSOLUTE MAXIMUM RATINGS (1)
Symbol VIN, VOUT Vcc TA TSTG PD TSOLDER Parameter Input/Output Voltage Power Supply Operating Temperature Storage Temperature Power Dissipation Ball Soldering Temperature & Time Rating -0.3 to VCC+0.3V -0.3 to 4.0 -40 to 85 -55 to 150 1.0 260 · 10 Unit V V °C °C W °C·sec Remark
HY62KF16403E-I
Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS H L L /WE X H X H /OE X H X L /LB X X H L H L L H L /UB X X H H L L H L L Mode Deselected Output Disabled Read I/O Pin I/O1~I/O8 I/O9~I/O16 High-Z High-Z High-Z DOUT High-Z DOUT DIN High-Z DIN High-Z High-Z DOUT DOUT High-Z DIN DIN Power Standby Active Active
L
L
X
Write
Active
Note: 1. H=VIH, L=VIL, X=don't care (VIL or VIH) 2. /UB, /LB(Upper, Lower Byte enable) These active LOW inputs allow individual bytes to be written or read. When /LB is LOW, data is written or read to the lower byte, I/O 1 -I/O 8. When /UB is LOW, data is written or read to the upper byte, I/O 9 -I/O 16.
Rev.01 / Nov.02
2
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