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Part: HY62KF08802B
Category:
Memory
-> SRAM
-> Low Power
-> 8 Mb
-> Super Low Power Slow SRAM
Description: 1Mx8bit Full CMOS SRAM
Company: Hynix Semiconductor
Datasheet: Download HY62KF08802B datasheet File size : 504 kB
Request For quote: Find where to buy HY62KF08802B
Datasheet text preview:
HY62KF08802B Series
1Mx8bit full CMOS SRAM
Document Title
1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM
Revision History
Revision No 00 01 History Initial Draft Draft Date Jan.19.2002 Remark Preliminary Final
DC Electrical Characteristics Nov.06.2002 - ICC changed 4mA -> 3mA - ICC1 changed 20mA at 55ns / 15mA at 70ns / 2mA at 1us - ISB1 LL-Part changed 30uA -> 20uA Absolute Maximum Ratings - VCC changed -0.3 to 4.6V -> -0.3 to 4.0V AC Test Conditions - Output Load changed 5pF -> 30p Data Retention Electric Characteristic - ICCDR LL-Part changed 20uA -> 10uA
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.01 / Nov.02 Hynix Semiconductor
HY62KF08802B Series
DESCRIPTION
The HY62KF08802B is a high speed, super low power and 8Mbit full CMOS SRAM organized as 1M words by 8bits. The HY62KF08802B uses high performance full CMOS process technology and is designed for high speed and low power circuit technology. It is particularly well-suited for the high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.2V.
FEATURES
· Fully static operation and Tri-state output · TTL compatible inputs and outputs · Battery backup -. 1.2V(min) data retention · Standard pin configuration -. 44pin 400mil TSOP-II (Forward)
Product No. HY62KF08802B-I
Voltage (V) 2.7~3.6
Speed (ns) 55/70
Operation Current/Icc(mA) 3
Standby Current(uA) SL LL 12 20
Temperature (°C) -40~85
Note 1. I : Industrial 2. Current value is max.
PIN CONNECTION
A4 A3 A2 A1 A0 /CS1 NC NC I/O1 I/O2 Vcc Vss I/O3 I/O4 NC NC /WE A19 A18 A17 A16 A15 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 /OE CS2 A8 NC NC I/O8 I/O7 Vss Vcc I/O6 I/O5 NC NC A9 A10 A11 A12 A13 A14
BLOCK DIAGRAM
A0 COLUMN DECODER ROW DECODER I/O1
SENSE AMP
ADD INPUT BUFFER
PRE DECODER
DATA I/O BUFFER
MEMORY ARRAY 1M x 8
WRITE DRIVER
BLOCK DECODER
I/O8
A19
/CS1 CS2
TSOPII (Forward)
/OE /WE
PIN DESCRIPTION
Pin Name /CS1, CS2 /WE /OE I/O1~I/O8 Pin Function Chip Select Write Enable Output Enable Data Inputs/Outputs Pin Name A0~A19 Vcc Vss NC Pin Function Address Inputs Power (2.7~3.6V) Ground No Connection
Rev.00 / Jan.02
2
HY62KF08802B Series
ORDERING INFORMATION
Part No. HY62KF08802B-SD(I) HY62KF08802B-DD(I) Note 1. I : Industrial Speed 55/70 55/70 Power SL-part LL-part Temp. I I Package TSOP-II TSOP-II
ABSOLUTE MAXIMUM RATINGS (1)
Symbol VIN, VOUT Vcc TA TSTG PD TSOLDER Parameter Input/Output Voltage Power Supply Operating Temperature Storage Temperature Power Dissipation Ball Soldering Temperature & Time Rating -0.3 to VCC+0.3V -0.3 to 4.0 -40 to 85 -55 to 150 1.0 260 · 10 Unit V V °C °C W °C·sec Remark
HY62KF08802B-I
Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 H X L L L CS2 X L H H H /WE X X H H L /OE X X H L X Mode Deselected Deselected Output Disabled Read Write I/O Pin (I/O1~I/O8) High-Z High-Z High-Z DOUT DIN Power Standby Active Active Active
Note: 1. H=VIH, L=VIL, X=don't care (VIL or VIH)
Rev.00 / Jan.02
2
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