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Part: HY62CT08081E-DTE
Category:
Memory
-> SRAM
-> Low Power
-> 256 Kb
Description:
Company: Hynix Semiconductor
Datasheet: Download HY62CT08081E-DTE datasheet File size : 504 kB
Request For quote: Find where to buy HY62CT08081E-DTE
Datasheet text preview:
HY62CT08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power Slow SRAM
Revision History
Revision No 00 01 History Initial Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load Revised - Remove L-Part - Change LL-Part Isb1 Limit @E.T/I.T : 15uA => 20uA Revised - Marking Information Change : SOP Type Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Nov.01.2000 Dec.05.2000 Remark Preliminary Preliminary
02
Feb.13.2001
Final
03
Feb.21.2001
Final
04
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / Apr. 2001 Hynix Semiconductor
HY62CT08081E Series
DESCRIPTION
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
FEATURES
· · · · · Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup - 2.0V(min.) data retention Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL 10 20 20 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Industrial)
Product Voltage No. (V) HY62CT08081E-C 5.0 HY62CT08081E-E 5.0 HY62CT08081E-I 5.0 Note 1. Current value is max.
Speed (ns) 55/70/85 55/70/85 55/70/85
Operation Current(mA) 10 10 10
PIN CONNECTION
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
/OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name /CS /WE /OE A0 ~ A14 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground
A0
BLOCK DIAGRAM
SENSE AMP ROW DECODER ADD INPUT BUFFER I/O1 OUTPUT BUFFER I/O8
COLUMN DECODER
A14 /CS /OE /WE
Rev 04 / Apr. 2001
CONTROL LOGIC
WRITE DRIVER
MEMORY ARRAY 512x512
2
HY62CT08081E Series
ORDERING INFORMATION
Part No. HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DTC HY62CT08081E-DTE HY62CT08081E-DTI Speed 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 Power LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part Temp 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C 0 to 70°C -25 to 85°C -40 to 85°C Package PDIP
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol Vcc, VIN, VOUT TA Parameter Power Supply, Input/Output Voltage Operating Temperature HY62CT08081E-C HY62CT08081E-E HY62CT08081E-I Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time Rating -0.3 to 7.0 0 to 70 -25 to 85 -40 to 85 -65 to 150 1.0 50 260 ·10 Unit V °C °C °C °C W mA °C·sec
TSTG PD IOUT TSOLDER Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Vcc Power Supply Voltage 4.5 Vss Ground 0 VIH Input High Voltage 2.2 VIL Input Low Voltage -0.3(1) Note 1. VIL = -3.0V for pulse width less than 50ns Typ. 5.0 0 Max. 5.5 0 Vcc+0.3 0.8 Unit V V V V
Rev 04 / Apr. 2001
2
Others parts begin by hy
HY-1 HY-2 HY-3 HY-4 HY-5 HY-6 HY-7 HY-8 HY-9 HY-10 HY-11 HY-12 HY-13 HY-14 HY-15 HY-16 HY-17 HY-18 HY-19 HY-20 HY-21 HY-22 HY-23 HY-24 HY-25 HY-26 HY-27 HY-28 HY-29 HY-30 HY-31 HY-32 HY-33 HY-34
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