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Part: HY51V65163HGT-45
Category:
Memory
-> DRAM
-> EDO/FPM DRAM
Description: 4m X 16bit Edo DRAM
Company: Hynix Semiconductor
Datasheet: Download HY51V65163HGT-45 datasheet File size : 66 kB
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Datasheet text preview:
HY51V(S)65163HG/HGL
4M x 16Bit EDO DRAM
PRELIMINARY
DESCRIPTION
This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability
FEATURES
· · · · · Extended data out operation Read-modify-write capability Multi-bit parallel test capability LVTTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability · · · JEDEC standard pinout 50pin plastic SOJ/TSOP-II(400mil) Single power supply of 3.3V +/- 10% Battery back up operation(L-version)
·
Fast access time and cycle time
Part No HY51V(S)65163HG/HGL-45 HY51V(S)65163HG/HGL-5 HY51V(S)65163HG/HGL-6 tRAC 45ns 50ns 60ns tAA 23ns 25ns 30ns tCAC 12ns 13ns 15ns tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns
·
Power dissipation
45ns Active Standby 468mW 50ns 432mW 60ns 396mW
·
Refresh cycle
Part No HY51V65163HG* HY51V65163HGL* Ref 4K Ref 4K Ref Normal 64ms 128ms L-part
1.8mW(CMOS level Max) 0.72mW (L-version : Max)
* : /RAS only, CBR and hidden refresh
ODERING INFORMATION
Part Number HY51V(S)65163HG/HG(L)J-45 HY51V(S)65163HG/HG(L)J-5 HY51V(S)65163HG/HG(L)J-6 HY51V(S)65163HG/HG(L)T-45 HY51V(S)65163HG/HG(L)T-5 HY51V(S)65163HG/HG(L)T-6
(S) : Self refresh, (L) : Low power
Access Time 45ns 50ns 60ns 45ns 50ns 60ns
Package
400mil 50pin SOJ
400mil 50pin TSOP-II
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.0.1/Apr.01
HY51V(S)65163HG/HGL
PIN CONFIGURATION
VCC IO0 IO1 IO2 IO3 VCC IO4 IO5 IO6 IO7 NC VCC /WE /RAS NC NC NC NC A0 A1 A2 A3 A4 A5 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25
50 VSS 49 48 47 46 IO15 IO14 IO13 IO12
45 VSS 44 43 42 41 40 39 38 IO11 IO10 IO9 IO8 NC VSS /LCAS
37 /UCAS 36 35 /OE NC
34 NC 33 32 31 30 29 28 27 26 NC A11 A10 A9 A8 A7 A6 VSS
50 Pin Plastic SOJ / TSOP-II
PIN DESCRIPTION
Pin /RAS /UCAS, /LCAS /WE /OE A0-A11 A0-A11 I/O 0- I/O15 Vcc Vss NC Function Row Address Strobe Column Address Strobe Write Enable Output Enable Address Inputs Refresh Address Inputs Data Input / Output Power (3.3V) Ground No connection
Rev.0.1/Apr.01
2
HY51V(S)65163HG/HGL
ABSOLUTE MAXIMUM RATINGS
Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to Vss Voltage on Vcc relative to Vss Short Circuit Output Current Power Dissipation Symbol TA TSTG VT Vcc IOUT PT Rating 0 ~ 70 -55 ~ 125 -0.5 ~ Vcc + 0.5 (Max 4.6V) -0.5 ~ 4.6 50 1 Unit
o o
C C
V V mA W
Note : Operation at above absolute maximum rating can adversely affect device reliability.
Recommended DC OPERATING CONDITIONS (TA=0 to 70 oC)
Parameter Power Supply Voltage Power Supply Voltage Input High Voltage Input Low Voltage Symbol Vcc Vss VIH VIL Min 3.0 0 2.0 -0.3 Typ. 3.3 0 Max 3.6 0 Vcc + 0.3 0.8 Unit V V V V Note 1,2 2 1 1
Note : All voltages are referenced to Vss 1. 6.0V at pulse width 10ns which is measured at Vcc 2. -0.1V at pulse width 10ns which is measured at Vss
Rev.0.1/Apr.01
3
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