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Part: HY51V64400HGT-5
Category:
Memory
-> DRAM
-> EDO/FPM DRAM
-> 64 Mb
Description:
Company: Hynix Semiconductor
Datasheet: Download HY51V64400HGT-5 datasheet File size : 66 kB
Request For quote: Find where to buy HY51V64400HGT-5
Datasheet text preview:
HY51V64400HG
16M x 4Bit Fast Page DRAM
PRELIMINARY
DESCRIPTION
This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Fast Page mode CMOS DRAMs. Fage page mode offers high speed of random access memory within the same row. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(8K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achieve high speed access and high reliability
FEATURES
· · · · · Fast page mode operation Read-modify-write capability Multi-bit parallel test capability LVTTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden Refresh · · · · JEDEC standard pinout 32pin plastic SOJ/TSOP-II(400mil) Single power supply of 3.3V +/- 10% Early write or output enable controlled write
·
Fast access time and cycle time
Part No HY51V64400HG-45 HY51V64400HG-5 HY51V64400HG-6 tRAC 45ns 50ns 60ns tAA 23ns 25ns 30ns tCAC 12ns 13ns 15ns tRC 74ns 84ns 104ns tHPC 17ns 20ns 25ns
·
Power dissipation
45ns Active Standby 352mW 50ns 312mW 60ns 278mW
·
Refresh cycle
Part No HY51V64400HG Ref 8K Normal 64ms
1.8mW(CMOS level Max) 0.72mW (L-version : Max)
ORDERING INFORMATION
Part Number HY51V64400HGJ-45 HY51V64400HGJ-5 HY51V64400HGJ-6 HY51V64400HGT-45 HY51V64400HGT-5 HY51V64400HGT-6 Access Time 45ns 50ns 60ns 45ns 50ns 60ns Package
400mil 32pin SOJ
400mil 32pin TSOP-II
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.0.1/Apr.01
HY51V64400HG
PIN CONFIGURATION
VCC I/O0 I/O1 NC NC NC VCC WE RAS A0 A1 A2 A3 A4 A5 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
VSS I/O3 I/O2 NC NC VSS CAS OE A12 A11 A10 A9 A8 A7 A6 VSS
32 Pin Plastic SOJ / TSOP-II
PIN DESCRIPTION
Pin /RAS /CAS /WE /OE A0-A12 A0-A12 I/O 0- I/O 3 Vcc Vss NC Function Row Address Strobe Column Address Strobe Write Enable Output Enable Address Inputs Refresh Address Inputs Data Input / Output Power (3.3V) Ground No connection
Rev.0.1/Apr.01
2
HY51V64400HG
ABSOLUTE MAXIMUM RATINGS
Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative to Vss Voltage on Vcc relative to Vss Short Circuit Output Current Power Dissipation Symbol TA TSTG VT Vcc IOUT PT Rating 0 ~ 70 -55 ~ 125 -0.5 ~ Vcc + 0.5 (Max 4.6V) -0.5 ~ 4.6 50 1 Unit
o o
C C
V V mA W
Note : Operation at above absolute maximum rating can adversely affect device reliability.
Recommended DC OPERATING CONDITIONS (TA=0 to 70 oC)
Parameter Power Supply Voltage Power Supply Voltage Input High Voltage Input Low Voltage Symbol Vcc Vss VIH VIL Min 3.0 0 2.0 -0.3 Typ. 3.3 0 Max 3.6 0 Vcc + 0.3 0.8 Unit V V V V Note 1,2 2 1 1
Note : All voltages are referenced to Vss 1. 6.0V at pulse width 10ns which is measured at Vcc 2. -0.1V at pulse width 10ns which is measured at Vss
Rev.0.1/Apr.01
3
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