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Part: S9089
Category:
Optoelectronics
-> Photosensors
-> Photodiodes
-> Si-based Photodiodes
Description:
Company: Hamamatsu Photonic Systems
Datasheet: Download S9089 datasheet File size : 165 kB
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Datasheet text preview:
PHOTODIODE
Si photodiode
S9089
Highly reliable quartz window photodiode for VUV detection
S9089 is a VUV (vacuum ultraviolet) sensitive Si photodiode ideal for ArF (=193 nm) excimer laser detection. Compared to conventional types, S9089 offers improved sensitivity stability against VUV irradiation. The package is hermetically sealed by a newly developed quartz window that keeps it fully airtight and highly reliable. This package is also easier to handle than S8551 windowless type photodiode.
Features
Applications
l Highly reliable quartz window l High reliable detection of ArF excimer laser (=193 nm) l Active area: 5.8 × 5.8 mm l TO-8 metal package
l ArF (=193 nm), KrF (=248 nm) excimer laser l UV light detection, etc.
measurement
I Absolute maximum ratings (Ta=25 °C)
Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg
Value 5 -40 to +100 -55 to +125
Unit V °C °C
I Electrical and optical characteristics (Ta=25 °C)
Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Dark current Rise time Terminal capacitance Symbol l lp S ID tr Ct
Condition
l=193 nm l=800 nm VR=10 mV VR=0 V, RL=1 kW l=655 nm, 10 to 90 % VR=0 V, f=10 kHz
Min. 0.04 0.4 -
Typ. 190 to 1000 780 0.06 0 .5 0.02 2 0.7
Max. 0.5 -
Unit nm nm A/W A/W nA µs nF
PRELIMINARY DATA Sep. 2002
1
Si photodiode
I Spectral response
0.6 (Typ. Ta=25 °C)
S9089
0.5
PHOTO SENSIVITY (A/W)
0.4
0.3
0.2
0.1
0 190
400
600
800
1000
1200
WAVELENGTH (nm)
KSPDB0225EA
I Dimensional outline (unit: mm)
13.9 ± 0.2 12.35 ± 0.1 9.1 ± 0.1
ACTIVE AREA 5.83 × 5.83 QUARTZ GLASS PHOTOSENSITIVE SURFACE
0.45 LEAD
7.5 ± 0.2 ANODE TERMINAL MARK 1.4 DEPTH 0.15
COMMON TO CASE
0.5 MAX.
(15.0) 4.45 ± 0.2
1.9
KSPDA0157EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 Nor th Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KSPD1062E01 Sep. 2002 DN
Others parts begin by s9
S9-1 S9-2
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