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Part: EGP20AthruEGP20KSeries
Category:
Discrete
-> Diodes & Rectifiers
-> Glass Passivated
Description: 2.0 Ampere Glass Passivated High Efficiency Rectifiers
Company: Fairchild Semiconductor
Datasheet: Download EGP20AthruEGP20KSeries datasheet File size : 64 kB
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Datasheet text preview:
EGP20A-EGP20K
EGP20A - EGP20K
Features · Glass passivated cavity-free junction. · High surge current capability. · Low leakage current. · Superfast recovery time for high
efficiency.
DO-15
COLOR BAND DENOTES CATHODE
· Low forward voltage, high current
capability.
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25°C unless otherwise noted
Parameter
20A 20B Maximum Repetitive Reverse Voltage Average Rectified Forward Current, .375 " lead length @ TA = 55°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 100 20C 150
Value
20D 200 2.0 75 -65 to +150 -65 to +150 20F 20G 20J 20K 300 400 600 800
Units
V A A °C °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
PD R J A R J L
Parameter
Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead
Value
3.15 40 15
Units
W °C/W °C/W
Electrical Characteristics
Symbol
VF trr IR CT
TA = 25°C unless otherwise noted
Parameter
20A 20B Forward Voltage @ 2.0 A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 125°C Total Capacitance VR = 4.0 V, f = 1.0 MHz 20C 0.95 50
Device
20D 20F 20G 20J 20K 1.25 1.7 75 5.0 100 70 45
Units
V ns µA µA pF
2 0 0 1 Fairchild Semiconductor Corporation
EGP20A - EGP20K, Rev. C
EGP20A-EGP20K
Typical Characteristics
Average Rectified Forward Current, IF [A]
2
SINGLE PHASE HALF WAVE 1 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS
0
Peak Forward Surge Current, IFSM [A]
3
90 75 60 45 30 15 0
0
25
50 75 100 125 A m b i e n t Temperature [ºC]
150
175
1
2
Figure 1. Forward Current Derating Curve
50 10 Forward Current, IF [A]
EGP20A-EGP20D
Figure 2. Non-Repetitive Surge Current
1 00 10
TA = 150 º C
5 10 20 N u m b e r of Cycles at 60Hz
50
100
T A = 150 ºC
T A= 25º C
Reverse Current, IR [mA]
1 0.1 0.01
1
TA = 125 º C
TA = 75º C
0.1
EGP20F-EGP20K
0.01 0.2
Pulse Width = 300µs µ 2% Duty Cycle
TA = 25º C
0.4
0.6 0.8 1 1.2 1.4 Forward Voltage, VF [V]
1.6
1.8
0.001
0
20 40 60 80 1 00 1 20 1 40 Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
140 T o t a l Capacitance, C T [pF] 120 100 80
Figure 4. Reverse Current vs Reverse Voltage
EGP20A-EGP20D
60
EGP20F-EGP20K
40 20 0 0.1 1 10 100 R e v e r s e Voltage, V R [V] 1000
Figure 5. Total Capacitance
50 NONINDUCTIVE 50 NONINDUCTIVE
+0.5A
(-) Pulse Generator (Note 2)
trr
DUT
0 -0.25A
50V (approx)
50 NONINDUCTIVE
OSCILLOSCOPE (Note 1)
(+)
NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR 5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2 0 0 1 Fairchild Semiconductor Corporation EGP20A - EGP20K, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
Others parts begin by eg
EG-1 EG-2
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