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Part: EGP10K

Category:
 Discrete
   -> Diodes & Rectifiers
             -> Glass Passivated

Description: 1.0A Ultra Fast Recovery Rectifier

Company: Fairchild Semiconductor

Datasheet: Download EGP10K datasheet     File size : 63 kB

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Datasheet text preview:
EGP10A-EGP10K

EGP10A - EGP10K
Features · Superfast recovery time for high
efficiency.

· Low forward voltage, high current
capability.

· Low leakage current. · High surge current capability.

DO-41
COLOR BAND DENOTES CATHODE

Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
VRRM IF(AV) IFSM Tstg TJ
TA = 25°C unless otherwise noted

Parameter
10A 10B Maximum Repetitive Reverse Voltage Average Rectified Forward Current, .375 " lead length @ TL = 55°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 50 100 10C 150

Value
10D 200 1.0 30 -65 to +150 -65 to +150 10F 10G 10J 10K 300 400 600 800

Units
V A A °C °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics
Symbol
PD RJA

Parameter
Power Dissipation Thermal Resistance, Junction to Ambient

Value
2.5 50

Units
W °C/W

Electrical Characteristics
Symbol
VF trr IR CT

TA = 25°C unless otherwise noted

Parameter
10A 10B Forward Voltage @ 1.0 A Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Reverse Current @ rated VR TA = 25°C TA = 125°C Total Capacitance VR = 4.0 V, f = 1.0 MHz 10C 50 0.95

Device
10D 10F 10G 10J 10K 1.25 1.7 75 5.0 100 22 15

Units
V ns µA µA pF

2 0 0 1 Fairchild Semiconductor Corporation

EPG10A - EPG10K, Rev. C

EGP10A-EGP10K

Typical Characteristics
Average Rectified Forward Current, IF [A] 1

0.75

0.5 SINGLE PHASE

0.25

HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS

Peak Forward Surge Current, IFSM [A]

30 25 20 15 10 5 0

0 25

50

75 100 125 Lead Temperature [ºC]

150

175

1

2

Figure 1. Forward Current Derating Curve
50
T A= 150 º C

Figure 2. Non-Repetitive Surge Current
1000 100

5 10 20 Number of Cycles at 60Hz

50

100

Forward Current, IF [A]

10
EGP10A-EGP10D TA = 25º C

Reverse Current, IR [mA]

1

10 1 0.1

T A = 125 º C

T A = 100 º C

0.1

EGP10F-EGP10K

0.01 0.2

Pulse Width = 300µs µ 2% Duty Cycle

TA = 25º C

0.4

Figure 3. Forward Voltage Characteristics
60 Total Capacitance, CT [pF] 50 40 30

0.6 0.8 1 1.2 1.4 Forward Voltage, VF [V]

1.6

1.8

0.01

0

20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%]

Figure 4. Reverse Current vs Reverse Voltage

EGP10A-EGP10D EGP10F-EGP10K

20 10 0 0.1

1 10 100 Reverse Voltage, VR [V]

1000

50 NONINDUCTIVE

50 NONINDUCTIVE

Figure 5. Total Capacitance
+0.5A
(-) Pulse Generator (Note 2)

trr

DUT

0 -0.25A

50V (approx)
50 NONINDUCTIVE

OSCILLOSCOPE (Note 1)

(+)

NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms.

-1.0A

1.0cm

SET TIME BASE FOR 5/ 10 ns/ cm

Reverse Recovery Time Characterstic and Test Circuit Diagram
2 0 0 1 Fairchild Semiconductor Corporation EPG10A - EPG10K, Rev. C

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER

FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM

OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®

SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®

VCXTM

STAR*POWER is used under license

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4




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