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Part: D45H8
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
-> Amplifier
Description: Power Transistor
Company: Fairchild Semiconductor
Datasheet: Download D45H8 datasheet File size : 167 kB
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Datasheet text preview:
D45H8 / NZT45H8
Discrete POWER & Signal Technologies
D45H8
NZT45H8
C
B
E C E C
TO-220
SOT-223
B
PNP Power Amplifier
This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5Q.
Absolute Maximum Ratings*
Symb ol
VCEO IC TJ, Tst g Collector- Emitter Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Valu e
60 8.0 -55 to +150
Un its
V A °C
Oper ating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symb ol
PD RJC RJA
TA = 25°C unless otherwise noted
Ch aracteristic
Tot al Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient D45H8 60 480 2.1 62. 5
Max
*NZ T45H8 1.5 12 83. 3
Un its
W mW / °C °C/W °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
Electrical Characteristics
Symb ol Parameter
TA = 25°C unless otherwise noted
T est Conditions
Min
Max
Un its
OFF CHARACTERISTICS
V(BR) CEO ICBO IEBO Collector- Emitter Breakdown Voltage Collector- Cutof f Current Emitt er-Cut of f Current I C = 100 mA, IB = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 60 10 100 V µA µA
ON CHARACTERISTICS
hFE VCE(sat ) VBE( sat) VBE( on) DC Current Gain Collector- Emitter Saturation Voltage Base-Emit ter On Voltage Base-Emit ter On Voltage I C = 2.0 A, VCE = 1.0 V I C = 4.0 A, VCE = 1.0 V I C = 8.0 A, IB = 0.4 A I C = 8.0 A, IB = 0.8 A I C = 10 mA, VCE = 2.0 V 0.54 60 40 1.0 1.5 0.65 V V V
SMALL SIGNAL CHARACTERISTICS
fT Curr ent Gain - Bandwidth Product I C = 500 mA, VCE = 10 V, 40 MHz
DC Typical Characteristics
Typical Pulsed Current Gain vs Collector Current
200 180
12 5 °C Vc e = 5V
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Coll ector- Emi tter Saturation Vol tage vs Collector Current
1 = 10
125 ºC
0.8 0.6 0.4 0.2
160 140 120 100 80 60
- 40 °C 25 °C
25 °C
- 40 ºC
40 0.01 0.02
0.05 0.1 0.2 0.5 1 2 I C - COLLECTOR CURRENT (A)
5
10
0 0.1
1 I C - COLLECTOR CURRENT (A)
PQ
10 15
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
DC Typical Characteristics
(continued)
1 .6 1 .4 1 .2 1
= 10
VBE(ON- BASE-EMITTER ON VOLTAGE (V) )
VB ESAT- BASE-EMITTER VOLTAGE (V)
Base-Em itt er Saturation Volt age vs Collector Current
Base-Emi tt er ON Voltage vs Col lector Current
VCE = 5V
1.4 1.2 1
- 40 ºC
- 40 ºC 25 °C
0 .8 0 .6 0 .4 0.1
25 °C
12 5 ºC
0.8 0.6 0.4 0.1
125 ºC
1 I C - COLLECTOR CURRENT (A)
10
1 I C - COLLECTOR CURRENT (A)
10
Collector-Cutoff Current vs Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 100 V CB = 50V 10
1
0. 1
0. 01 25
50 75 100 125 T A - AMBIENT TEMPERATURE (ºC)
P 5Q
150
AC Typical Characteristics
Safe Operating Area TO-220
D45H8 / NZT45H8
PNP Power Amplifier
(continued)
AC Typical Characteristics
(continued)
Maximum Power Dissipation vs. Case Temperature
Maximum Power Dissipation vs. Ambient Temperature
POWER DISSIPATION vs AMBIENT TEMPERATURE
PD - POWER DISSIPATION (W) 1. 5 1. 25 1 0. 75 0. 5 0. 25 0
SOT-223
0
25
50 75 10 0 o TEMPERATURE ( C)
12 5
15 0
Thermal Response in TO-220 Package
Others parts begin by d4
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