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Part: EFC240B
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> JFETs (Junction-FETs)
-> Power FETs
-> GaAs
Description: Low Distortion GAAS Power Fets
Company: Excelics Semiconductor, Inc.
Datasheet: Download EFC240B datasheet File size : 513 kB
Request For quote: Find where to buy EFC240B
Datasheet text preview:
Excelics
PRELIMINARY DATA SHEET
· · · · · · · +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 2400 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 40mA PER BIN RANGE
50 D D
EFC240B
Low Distortion GaAs Power FET
960 156
D
D
48
350
40
S
G
S 120
G
S
G
S
G
S
100
95
50
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB compression Vds=10V, Ids=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=6mA
Chip Thickness: 75 ± 13 microns All Dimensions In Microns
MIN 29.0 7.0
TYP 31.0 31.0 8.5 6.0 33
MAX
UNIT dBm dB %
320 200
520 280 -2.5
720
mA mS
-4.0
V V V
o
Drain Breakdown Voltage Igd=2.4mA Source Breakdown Voltage Igs=2.4mA Thermal Resistance (Au-Sn Eutectic Attach)
-15 -10
-20 -17 20
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Drain-Source Voltage 14V 10V Vds Gate-Source Voltage -8V -4.5V Vgs Drain Current Idss 570mA Ids Forward Gate Current 60mA 10mA Igsf Input Power 29dBm @ 3dB Compression Pin Channel Temperature 175oC 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 6.8 W 5.7 W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
EFC240B
PRELIMINARY DATA SHEET
Low Distortion GaAs Power FET
S-PARAMETERS 10V, 1/2 Idss
Freq GHz 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 S11 Mag 0.944 0.915 0.907 0.907 0.912 0.911 0.920 0.915 0.919 0.922 0.925 0.932 0.933 0.939 0.941 0.945 0.946 0.952 0.955 0.955 0.954 0.948 0.958 0.956 0.961 0.954 S11 Ang -86.7 -125.9 -144.8 -155.6 -161.6 -166.1 -169.0 -171.1 -173.3 -176.1 -179.2 178.8 177.0 175.4 172.9 170.6 169.7 170.3 170.4 168.7 160.5 158.1 157.0 156.1 155.3 153.5 S21 Mag 7.064 4.551 3.217 2.450 1.929 1.596 1.362 1.181 1.040 0.922 0.826 0.747 0.681 0.622 0.569 0.522 0.483 0.452 0.421 0.387 0.359 0.327 0.303 0.275 0.251 0.232 S21 Ang 130.8 104.6 89.3 78.1 69.0 60.9 54.1 47.7 41.7 35.7 30.0 24.7 19.1 13.8 8.5 3.0 -2.1 -7.0 -12.7 -18.0 -23.1 -26.7 -30.7 -33.9 -36.4 -39.0 S12 Mag 0.041 0.052 0.055 0.054 0.052 0.050 0.049 0.047 0.045 0.041 0.041 0.039 0.037 0.035 0.035 0.035 0.035 0.034 0.034 0.035 0.034 0.035 0.035 0.036 0.038 0.036 S12 Ang 41.9 22.7 13.2 6.7 2.7 0.1 -2.2 -3.4 -4.5 -5.2 -6.2 -7.5 -7.5 -7.7 -7.0 -6.4 -7.5 -6.2 -6.5 -3.8 -5.3 -2.1 0.6 2.9 7.7 10.4 S22 Mag 0.296 0.374 0.409 0.433 0.460 0.487 0.512 0.549 0.586 0.620 0.647 0.673 0.690 0.716 0.739 0.752 0.764 0.776 0.791 0.813 0.835 0.847 0.870 0.876 0.887 0.897 S22 Ang -132.9 -146.8 -152.2 -154.1 -157.6 -158.3 -159.2 -161.0 -161.9 -162.0 -162.2 -163.2 -165.6 -168.5 -170.1 -172.8 -177.3 176.4 169.8 164.9 168.3 166.2 163.7 162.1 160.5 160.1
Note: The data included 0.7 mils diameter Au bonding wires: 4 gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each.
Others parts begin by ef
EF-1 EF-2 EF-3 EF-4
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