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Part: DD600S16K4
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description:
Company: Eupec GmbH & Co KG
Datasheet: Download DD600S16K4 datasheet File size : 216 kB
Request For quote: Find where to buy DD600S16K4
Datasheet text preview:
European PowerSemiconductor and Electronics Company
Marketing Information DD 600 S 16 K4
6 1 ,5 18 M8 max. 16
screwing depth
3 1 ,5
130 114
C1 E1
C2 E2
7 2,5 deep 57 2,5 deep
C1
C2
E1
E2
Feb.97
DD 600 S 16 K4
Elektrische Eigenschaften Electrical properties tvj = 25°C V RRM IF tp = 1 ms RMS, f=50 Hz, t=1 min. IFRM VISOL min. tvj = 25°C , iF = 600 A tvj = 125°C, i F = 600 A Sperrstrom Rückstromspitze reverse current peak reverse recovery current vCE = 1600 V, tvj = 25°C vCE = 1600 V, tvj = 125°C iF=600 A, -di F/dt=600 A/µs IRM vRM = 900V, t vj =25°C vRM = 900V, t vj =125°C Sperrverzögerungsladung recovered charge iF=600 A, -di F/dt=600 A/µs Qr vRM = 900V, t vj =25°C vRM = 900V, t vj =125°C Thermische Eigenschaften Innerer Wärmewiderstand Übergangs-Wärmewiderstand Höchstzul.Sperrschichttemperatur Betriebstemperatur Lagertemperatur Mechanische Eigenschaften Innere Isolation Anzugsdrehmoment für mechanische Befestigung Anzugsdrehmoment für elektrische Anschlüsse Gewicht Thermal properties thermal resistance, junction to case pro Modul/per module, DC R thJC pro Zweig/per arm, DC R thCK tvj max tc op tstg pro Zweig/per arm max. junction temperature operating temperature storage temperature Mechanical properties internal insulation mounting torque terminal connection torque weight terminals M8 M1 M2 G Al 203 3 8...10 ca. 1500 Nm Nm g 0,04 °C/W 0,08 °C/W typ. 0,008 °C/W typ. 0,016 °C/W 150 -40...+125 -40...+125 °C °C °C 15 60 µAs µAs 50 100 A A iR vF typ. 2,4 2,2 4 40 1600 600 1200 3 max. 2,8 V V mA mA V A A kV Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung Charakteristische Werte Durchlaßspannung DC forward current repetitive peak forward current insulation test voltage Characteristic values forward voltage
thermal resistance, case to heatsink pro Modul/per module
DD 600 S 16 K4
1 200 1 000 iF [A] 800 600 400 200 0 0 10-1
7 5 4
Diode
Z(th)JC [°C/W]
10-2
7 5 4 3 2
0,5
1
1,5
2
2 ,5 vF [V]
3
3,5
10-3 -3 10
2
3 4 5 7 10-2
2
3 4 5 7 10 -1
2
3 4 5 7 1 00
2
3 4 5 7 101
D D 600 S 16 K4 / 1
DD 600 S 16 K4 / 2
t [s]
Bild / Fig. 1 D urchlaßkennlin ie pro Zweig (typisch) Fo rwa rd charcteristic per arm (typical) t vj = 25 °C t vj = 125 °C
Bild / Fig. 2 Transienter innerer Wärmewiderstand (DC) Transient thermal impedance (DC)
Others parts begin by dd
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