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Part: EL5210CY
Category:
Analog & Mixed-Signal Processing
-> Amplifiers
Description: 30 MHZ Rail-to-rail Input-output op Amp
Company: Elantec Semiconductor, Inc. (acquired by Intersil)
Datasheet: Download EL5210CY datasheet File size : 498 kB
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Datasheet text preview:
EL5210C/EL5410C
EL521 0C/EL54 10C
30MHz Rail-to-Rail Input-Output Op Amps
Features
· 30MHz -3dB bandwidth · Supply voltage = 4.5V to 16.5V · Low supply current (per amplifier) = 2.5mA · High slew rate = 33V/µs · Unity-gain stable · Beyond the rails input capability · Rail-to-rail output swing · Available in both standard and space-saving fine pitch packages
General Description
The EL5210C and EL5410C are low power, high voltage rail-to-rail input-output amplifiers. The EL5210C contains two amplifiers in one package and the EL5410C contains four amplifiers. Operating on supp l i e s ranging from 5V to 15V, while consuming only 2.5mA per amplifier, the EL5410C and EL5210C have a bandwidth of 30MHz -(-3dB). They also provide common mode input ability beyond the supply rails, as well as rail-to-rail output capability. This enables these amplifiers to offer maximum dynamic range at any supply voltage. The EL5410C and EL5210C also feature fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make these amplifiers ideal for high speed filtering and signal conditioning application. Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5410C is available in a space-saving 14-Pin TSSOP package, as well as the industry-standard 14-Pin SOIC. The EL5210C is available in the 8-Pin MSOP and 8-Pin SOIC packages. Both feature a standard operational amplifier pin out. These amplifiers operate over a temperature range of -40°C to +85°C.
Applications
· · · · · · · · Driver for A-to-D Converters Data Acquisition Video Processing Audio Processing Active Filters Test Equipment Battery Powered Applications Portable Equipment
Connection Diagram
Ordering Information
Part No. EL5210CS EL5210CS-T13 EL5210CY EL5210CY-T7 EL5210CY-T13 EL5410CS EL5410CS-T13 EL5410CR EL5410CR-T13 Package 8-Pin SOIC 8-Pin SOIC 8-Pin MSOP 8-Pin MSOP 8-Pin MSOP 14-Pin SOIC 14-Pin SOIC 14-Pin TSSOP 14-Pin TSSOP Tape & Reel 13" 7" 13" 13" 13" Outline # MDP0027 MDP0027 MDP0043 MDP0043 MDP0043 MDP0027 MDP0027 MDP0044 MDP0044
VOUTA 1 VINA- 2 VINA+ 3 VS+ 4 VINB+ 5 VINB- 6 VOUTB 7 + + + +
14 VOUTD 13 VINDVOUTA 1 12 VIND+ VINA- 2 11 VSVINA+ 3 10 VINC+ VS- 4 9 VINC8 VOUTC + + 7 VOUTB 6 VINB5 VINB+ 8 VS+
November 16, 2000
EL5210C (MSOP-8, SOIC-8)
EL5410C (TSSOP-14, SOIC-14)
Note: All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication; however, this data sheet cannot be a "controlled document". Current revisions, if any, to these specifications are maintained at the factory and are available upon your request. We recommend checking the revision level before finalization of your design documentation.
© 2000 Elantec Semiconductor, Inc.
EL5210C/EL5410C
EL52 10C/ E L541 0C
30MHz Rail-to-Rail Input-Output Op Amps
Absolute Maximum Ratings (T
A
= 25°C)
Values beyond absolute maximum ratings can cause the device to be prematurely damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. +18V Supply Voltage between VS+ and VSInput Voltage VS- - 0.5V, VS +0.5V Maximum Continuous Output Current 30mA
Maximum Die Temperature Storage Temperature Operating Temperature Power Dissipation ESD Voltage
+125°C -65°C to +150°C -40°C to +85°C See Curves 2kV
Important Note: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Characteristics
VS+ = +5V, VS - = -5V, RL = 1k and CL = 12pF to 0V, TA = 25°C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN CMIR CMRR AVOL VOL VOH IS C IOUT PSRR IS SR tS BW GBWP PM CS dG dP Input Offset Voltage Average Offset Voltage Drift [1] Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain Output Swing Low Output Swing High Short Circuit Current Output Current Power Supply Rejection Ratio Supply Current (Per Amplifier) Slew Rate [2] Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain [3] Differential Phase[3] f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V VS is moved from ±2.25V to ±7.75V No Load -4.0V VOUT 4.0V, 20% o 80% (AV = +1), VO = 2V Step 60 for VIN from -5.5V to 5.5V -4.5V VOUT 4.5V IL = -5mA IL = 5mA 4.8 -5.5 50 65 70 80 -4. 9 4.9 ±120 ±30 80 2. 5 33 140 30 20 50 110 0.12 0.17 3.75 -4. 8 VCM = 0V VCM = 0V 3 7 2 1 2 +5.5 60 15 mV µ V/°C nA G pF V dB dB V V mA mA dB mA V/µ s ns MHz MHz ° dB % ° Description Condition Min Typ Max Unit
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used
2
EL5210C/EL5410C
EL521 0C/EL54 10C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 5V, VS- = 0V, RL = 1k and CL = 12pF to 2.5V, TA = 25°C unless otherwise specified. Parameter Input Characteristics VO S TCVOS IB RIN CIN CMIR CMRR AVOL VO L VO H IS C IOUT PSRR IS SR tS BW GBWP PM CS dG dP Input Offset Voltage Average Offset Voltage Drift [1] Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain Output Swing Low Output Swing High Short Circuit Current Output Current Power Supply Rejection Ratio Supply Current (Per Amplifier) Slew Rate [2] Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain [3] Differential Phase[3] f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V VS is moved from 4.5V to 15.5V No Load 1V VOUT 4V, 20% o 80% (AV = +1), VO = 2V Step 60 for VIN from -0.5V to 5.5V 0.5V VOUT 4.5V IL = -5mA IL = 5mA 4.8 -0.5 45 65 66 80 100 4.9 ±120 ±30 80 2. 5 33 140 30 20 50 110 0.30 0.66 3.75 200 VCM = 2.5V VCM = 2.5V 3 7 2 1 2 +5.5 60 15 mV µ V/°C nA G pF V dB dB mV V mA mA dB mA V/µ s ns MHz MHz ° dB % ° D escription C on dition Min Typ Max U nit
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used
3
EL5210C/EL5410C
EL52 10C/ E L541 0C
30MHz Rail-to-Rail Input-Output Op Amps
Electrical Characteristics
VS+ = 15V, VS- = 0V, RL = 1k and CL = 12pF to 7.5V, TA = 25°C unless otherwise specified. Parameter Input Characteristics VOS TCVOS IB RIN CIN CMIR CMRR AVOL VOL VOH IS C IOUT PSRR IS SR tS BW GBWP PM CS dG dP Input Offset Voltage Average Offset Voltage Drift [1] Input Bias Current Input Impedance Input Capacitance Common-Mode Input Range Common-Mode Rejection Ratio Open-Loop Gain Output Swing Low Output Swing High Short Circuit Current Output Current Power Supply Rejection Ratio Supply Current (Per Amplifier) Slew Rate [2] Settling to +0.1% (AV = +1) -3dB Bandwidth Gain-Bandwidth Product Phase Margin Channel Separation Differential Gain [3] Differential Phase[3] f = 5MHz RF = RG = 1k and VOUT = 1.4V RF = RG = 1k and VOUT = 1.4V VS is moved from 4.5V to 15.5V No Load 1V VOUT 14V, 20% o 80% (AV = +1), VO = 2V Step 60 for VIN from -0.5V to 15.5V 0.5V VOUT 14.5V IL = -7.5mA IL = 7.5mA 14.65 -0.5 53 65 72 80 170 14.83 ±120 ±30 80 2.5 33 140 30 20 50 110 0.10 0.11 3.75 350 VCM = 7.5V VCM = 7.5V 3 7 2 1 2 +15.5 60 15 mV µ V/°C nA G pF V dB dB mV V mA mA dB mA V/µ s ns MHz MHz ° dB % ° D escription C on dition Min Typ Ma x Unit
Output Characteristics
Power Supply Performance
Dynamic Performance
1. Measured over operating temperature range 2. Slew rate is measured on rising and falling edges 3. NTSC signal generator used
4
EL5210C/EL5410C
EL521 0C/EL54 10C
30MHz Rail-to-Rail Input-Output Op Amps
Typical Performance Curves
EL5410C Input Offset Voltage Distribution 500 VS=± 5V TA=25° C Typical Production Distortion Quantity (Amplifiers) 25 VS=± 5V 20 Typical Production Distortion EL5410C Input Offset Voltage Drift
400 Quantity (Amplifiers)
300
15
200
10
100
5
0 -12 -10 -8 -6 -4 -2 -0 2 4 6 8 10 12 Input Offset Voltage (mV)
0 1 3 5 7 9 11 13 15 17 19 Input Offset Voltage Drift, TCVOS(µ V/° C) 21 150 150
Input Offset Voltage vs Temperature 5 0.008
Input Bias Current vs Temperature
Input Offset Voltage (mV)
4 Input Bias Current (µ A)
0.004
VS=± 5V
3
0
2
-0.004
1
-0.008
0 -50
-10
30
70
110
150
-0.012 -50
-10
30
70
110
Temperature (°C)
Temperature (°C)
Output High Voltage vs Temperature 4.96 -4.85
Output Low Voltage vs Temperature
4.95 Output High Voltage (V) Output Low Voltage (V) VS=± 5V IOUT=5mA 4.94
-4.87 VS=± 5V IOUT=5mA -4.89
4.93
-4.91
4.92
-4.93
4.91 -50
-10
30
70
110
150
-4.95 -50
-10
30
70
110
Temperature (°C)
Temperature (°C)
5
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