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Part: DK2414FCM
Category:
Discrete
-> Thyristors
Description: 1400V Fast Switching Thyristor
Company: Dynex Semiconductor
Datasheet: Download DK2414FCM datasheet File size : 108 kB
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Datasheet text preview:
DK24..FC
DK24..FC
Fast Switching Thyristor
Replaces July 2001 version, DS4268-4.0 DS4268-4.1 July 2002
FEATURES
s Low Switching Losses At High Frequency s Fully Characterised For Operation Up To 20kHz
KEY PARAMETERS VDRM IT(RMS) ITSM dVdt dI/dt tq 2000V 260A 4000A 200V/µs 500A/µs 50µs
APPLICATIONS
s High Power Inverters And Choppers s UPS s AC Motor Drives s Induction Heating s Cycloconverters
VOLTAGE RATINGS
Type Number Repetitive Peak Voltages VDRM VRRM V 2000 1800 1600 1400 Conditions
DK24 20FC K or M DK24 18FC K or M DK24 16FC K or M DK24 14FC K or M
VRSM = VRRM + 100V IDRM = IRRM = 25mA at VRRM or VDRM & Tvj Outline type code: TO93 See Package Details for further information. Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the Voltage Ratings selection table, then:Add K to type number for 3/4" 16 UNF thread, e.g. DK24 16FCK or Add M to type number for M16 thread, e.g. DK24 14FCM. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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DK24..FC
CURRENT RATINGS
Symbol I T(AV) IT(RMS) Parameter Mean on-state current RMS value Conditions Half wave resistive load, Tcase = 80oC Tcase = 80oC Max. 165 260 Units A A
SURGE RATINGS
Symbol I TSM I2t Parameter Surge (non-repetitive) on-state current I2t for fusing Conditions tp 10ms half sine; Tcase = 125oC VR = 0% VRRM - 1/4 sine Max. 4.0 80.0 x 103 Units kA A2s
THERMAL AND MECHANICAL DATA
Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance - junction to case Thermal resistance - case to heatsink dc Mounting torque 35.0Nm with mounting compound On-state (conducting) Tvj Virtual junction temperature Reverse (blocking) T stg Storage temperature range Mounting torque -40 30.0 125 150 35.0
o
Conditions
Min. -
Max. 0.13 0.06 125
Units
o
C/W C/W
o
o
C
C C
o
Nm
MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR 2 ITM QRA1 tp = 1ms dIR/dt IRR
0.5x IRR
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DK24..FC
DYNAMIC CHARACTERISTICS
Symbol VTM IRRM/IDRM dV/dt Parameter Maximum on-state voltage Peak reverse and off-state current Maximum linear rate of rise of off-state voltage Conditions At 450A peak, Tcase = 25oC At VRRM/VDRM, Tcase = 125oC Linear to 60% VDRM Tj = 125oC, Gate open circuit Gate source 20V, 20 dI/dt Rate of rise of on-state current tr < 0.5µs, Tj = 125°C VT(TO) rT tgd t(ON)TOT IH tq Threshold voltage On-state slope resistance Delay time Total turn-on time Holding current Turn-off time At Tvj = 125oC At Tvj = 125oC Tj = 25°C, IT = 50A, VD = 300V, IG = 1A, dI/dt = 30A/µs, dIG/dt = 1A/µs Tj = 25oC, ITM = 1A, VD = 12V Tj = 125°C, IT = 200A, VR = 50V, tq code: C dV/dt = 200V/µs (Linear to 60% VDRM), dIR/dt = 30A/µs, Gate open circuit Non-repetitive 1.5* 3* 800 1.25 1.66 70 50 Repetitive 50Hz Min. Max. 2.0 25 200 500 Units V mA V/µs A/µs A/µs V m µs µs mA µs
*Typical value.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol VGT IGT VGD VRGM IFGM PGM PG(AV) Parameter Gate trigger voltage Gate trigger current Gate non-trigger voltage Peak reverse gate voltage Peak forward gate current Peak gate power Mean gate power Anode positive with respect to cathode Conditions VDRM = 12V, Tcase = 25oC, RL = 6 VDRM = 12V, Tcase = 25oC, RL = 6 At VDRM Tcase = 125oC, RL = 1k Typ. Max. 3.0 200 0.2 5.0 4 16 3.0 Units V mA V V A W W
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DK24..FC
CURVES
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Gate characteristics
Fig.4 Typical recovered charge (for a device rated VDRM = 1000V, tq = 50µs)
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DK24..FC
Fig.5 Transient thermal impedance - junction to case
Fig.6 Non-repetitive sub-cycle surge on-state current and I2t rating
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