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Part: DIM1200ESM33-A000
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT Modules
Description: 3300V Single Switch Igbt Module
Company: Dynex Semiconductor
Datasheet: Download DIM1200ESM33-A000 datasheet File size : 143 kB
Request For quote: Find where to buy DIM1200ESM33-A000
Datasheet text preview:
DIM1200ESM33-A000
DIM1200ESM33-A000
Single Switch IGBT Module
Replaces June 2002, version DS5492-4.0 DS5492-5.0 February 2003
FEATURES
I I I I
KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.2V 1200A 2400A
10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I I I
External connection C1 Aux C C2 C3
High Reliability Inverters Motor Controllers Traction Drives
The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM1200ESM33-A000 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
G Aux E E1 E2 External connection Fig. 1 Single switch circuit diagram E3
ORDERING INFORMATION
Order As: DIM1200ESM33-A000 Note: When ordering, please use the whole part number.
Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
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DIM1200ESM33-A000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25°C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 85°C 1ms, Tcase = 115°C Tcase = 25°C, Tj = 150°C VR = 0, tp = 10ms, Tvj = 125°C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 3500V, V2 = 2600V, 50Hz RMS VGE = 0V Test Conditions Max. 3300 ± 20 1200 2400 16.5 720 6000 10 Units V V A A kW kA2s V pC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ESM33-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Parameter Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance (IGBT switch) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode T stg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 Electrical connections - M8 40 150 125 125 5 2 10 °C °C °C Nm Nm Nm 4 °C/kW 16 °C/kW Min. Typ. Max. 8 Units °C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/10
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DIM1200ESM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise. Symbol I CES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125°C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = ±20V, VCE = 0V IC = 120mA, VGE = VCE VGE = 15V, IC = 1200A VGE = 15V, IC = 1200A, , Tcase = 125°C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 1200A IF = 1200A, Tcase = 125°C Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - per arm Internal transistor resistance - per arm Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125°C, VCC = 2500V, tp 10µs, VCE(max) = VCES L*. di/dt IEC 60747-9 I1 I2 Min. 4.5 Typ. 5.5 3.2 4.0 1200 2400 2.5 2.5 270 4 10 0.09 7800 6600 Max. 6 90 12 6.5 Units mA mA µA V V V A A V V nF nF nH m A A
Note:
Measured at the power busbars and not the auxiliary terminals.
L* is the circuit inductance + LM
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200ESM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy IF = 1200A, VR = 1800V, dIF/dt = 5600A/µs Test Conditions IC = 1200A VGE = ±15V VCE = 1800V RG(ON) = RG(OFF) = 1.5 L = 100nH Cge = 220nF Min. Typ. 1400 250 1300 500 300 1600 14 600 950 700 Max. Units ns ns mJ ns ns mJ µC µC A mJ
Tcase = 125°C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr Erec Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse recovery current Diode reverse recovery energy Test Conditions IC = 1200A VGE = ±15V VCE = 1800V RG(ON) = RG(OFF) = 1.5 L ~ 100nH Cge = 220nF IF = 1200A, VR = 1800V, dIF/dt = 5000A/µs Min. Typ. 1600 300 1500 550 300 2300 900 1150 1100 Max. Units ns ns mJ ns ns mJ µC A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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